基本信息:
- 专利标题： 비대칭 채널과 게이트 절연막을 갖는 터널링 전계효과 트랜지스터 및 그 제조방법
- 专利标题（英）：Tunnel field-effect transistor with asymmetric channel and gate dielectric layer and fabrication method thereof
- 申请号：KR1020160031860 申请日：2016-03-17
- 公开(公告)号：KR101792615B1 公开(公告)日：2017-11-02
- 发明人： 박병국 , 권대웅 , 김장현 , 이준일
- 申请人： 서울대학교산학협력단
- 申请人地址： 서울특별시 관악구 관악로 * (신림동)
- 专利权人： 서울대학교산학협력단
- 当前专利权人： 서울대학교산학협력단
- 当前专利权人地址： 서울특별시 관악구 관악로 * (신림동)
- 代理人： 권오준
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L29/78 ; H01L29/66 ; H01L21/762 ; H01L21/306
The thickness of the present invention is a gate insulating film formed on the tunneling field effect relates to a transistor, the difference and / or the respective channel section of the depletion layer formed in each channel region and the source side channel region with a thickness thinner than the drain-side channel regions and material differences, and further the source side by forming the channel region to the drain side channel region than the energy band gap is an asymmetric structure with a small semiconductor material, the conventional bi-directional current characteristic and the tunneling electric field having an asymmetric channel and a gate insulating film by improving the problem of the low drive current It provides an effect transistor and a method of manufacturing the same.
公开/授权文献:
- KR1020170108258A 비대칭 채널과 게이트 절연막을 갖는 터널링 전계효과 트랜지스터 및 그 제조방법 公开/授权日：2017-09-27
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/72 | ....晶体管型器件，如连续响应于所施加的控制信号的 |
| ----------------H01L29/73 | .....双极结型晶体管 |