基本信息:
- 专利标题： 어닐 웨이퍼 및 어닐 웨이퍼의 제조방법, 그리고 디바이스의 제조방법
- 专利标题（英）：Anneal wafer, method for manufacturing anneal wafer, and method for manufacturing device
- 专利标题（中）：用于制造阳极波形的天线波形方法和制造装置的方法
- 申请号：KR1020117023058 申请日：2010-03-17
- 公开(公告)号：KR101657970B1 公开(公告)日：2016-09-20
- 发明人： 에바라,코지 , 하야미즈,요시노리 , 키쿠치,히로야스
- 申请人： 신에쯔 한도타이 가부시키가이샤
- 申请人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人： 신에쯔 한도타이 가부시키가이샤
- 当前专利权人地址： *-*, Ohtemachi *-chome, Chiyoda-ku, Tokyo, Japan
- 代理人： 특허법인씨엔에스
- 优先权： JPJP-P-2009-096671 2009-04-13
- 国际申请： PCT/JP2010/001891 2010-03-17
- 国际公布： WO2010119614 2010-10-21
- 主分类号： C30B29/06
- IPC分类号： C30B29/06 ; C30B33/02 ; H01L21/322 ; H01L21/02
The present invention, being grown by the CZ method, over the OSF region, or the annealing front is subjected to a rapid thermal annealing to the cut single crystal silicon wafers from the silicon single-crystal ingot consisting of the outer of the N region, or the region mixture of these regions of the OSF region a wafer, not the defect is present over a depth of at least RIE 1㎛ from the surface, and the yield is 80% or more of the TDDB characteristics, the annealing is within 3㎛ depth from the surface of the region in which the oxygen concentration is lowered by outward diffusion It provides a process for the preparation of a wafer and an annealed wafer. Accordingly, while securing without lowering the oxygen content in the surface layer due to the outward diffusion can sufficiently the strength of the surface layer, the oxygen precipitates or oxygen-related defects, such as COP, OSF nucleus is not present, grown-in defects also not present , the TDDB characteristic is provided with an excellent wafer.
公开/授权文献:
- KR1020120022749A 어닐 웨이퍼 및 어닐 웨이퍼의 제조방법, 그리고 디바이스의 제조방법 公开/授权日：2012-03-12