The present invention relates to a light emitting diode using the manufacturing method of the composite pattern through a wet etching process and this, in the manufacturing method of the light emitting diode, comprising: forming a p-type electrode on a substrate, p on the p-type electrode type GaN forming a compound semiconductor layer, and forming a GaN-based active layer, which generates the electrons and holes in the p-type GaN-based semiconductor layer to emit light, an n-type GaN-based semiconductor layer on the GaN-based active layer an upper layer forming, in correspondence to the shape of the first pattern on the n-type GaN-based semiconductor layer, forming a photoresist pattern to expose a partial region of the n-type GaN-based semiconductor layer, the exposed n-type forming a buffer layer on the GaN-based semiconductor layer, the method comprising: removing the photoresist pattern to form a mask pattern layer made of a buffer layer, the shape of the primary pattern advances a wet etching to the mask pattern layer as a mask. corresponding to that obtained by forming a n-type electrode on the step and the n-type GaN-based semiconductor layer, some areas on which the composite pattern is formed to form the second pattern is a composite of complex patterns in the n-type GaN-based semiconductor layer and a wet method of producing a GaN-based light emitting diode having a complex pattern by etching and thus the GaN-based light emitting diode made by featuring a technical base. Therefore, by by producing more than one compound of complex patterns in the normal photolithography process and a wet etching process, it is possible to manufacture an excellent light extraction structure relative to the light extracting structure formed of a single pattern or a surface roughness in a very simple process, the light emitting It has the advantage that it can easily be applied widely in the field of diode.