The present invention relates to a manufacturing process is very simple and can be a dynamic resistance as the device does not have the opposite doping effect is reduced, improving the TLP test when the current driving capability and low capacitance TVS method for producing a high ESD tolerance, P ⁺ N ^- N ⁺ P ^- P ⁺ structure, the first bottom step, P ⁺ N for producing a capacitance TVS chip ^- a first step for preparing a second low-capacitance TVS chip N ⁺ structure, the lower portion of the second low-capacitance TVS chip die-bonded to a metal pad on the first lead and the first low-capacitance claim the lower metal pad of the TVS chip comprising die-bonded to the second lead frame and the second low-capacitance TVS chip upper metal pad and the second of the lead frame to wire bonding, and technology related to the low capacitance TVS method with a one-way protection, comprising the step of wire bonding the first lead frame and the upper metal pads of the first low-capacitance TVS chip to be.