基本信息:
- 专利标题： 터너리 컨텐츠 어드레스가능 메모리를 위한 의사-NOR 셀
- 专利标题（英）：Pseudo-nor cell for ternary content addressable memory
- 专利标题（中）：-NOR PSEUDO-NOR细胞用于三次内容可寻址记忆
- 申请号：KR1020157020101 申请日：2013-12-20
- 公开(公告)号：KR101557926B1 公开(公告)日：2015-10-06
- 发明人： 바티콘다,라케쉬 , 데사이,니시쓰 , 중,창호
- 申请人： 퀄컴 인코포레이티드
- 申请人地址： **** Morehouse Drive, San Diego, CA *****-****, U.S.A.
- 专利权人： 퀄컴 인코포레이티드
- 当前专利权人： 퀄컴 인코포레이티드
- 当前专利权人地址： **** Morehouse Drive, San Diego, CA *****-****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US13/727,494 2012-12-26
- 国际申请： PCT/US2013/076835 2013-12-20
- 国际公布： WO2014105680 2014-07-03
- 主分类号： G11C15/04
- IPC分类号： G11C15/04 ; G11C11/41
Ternary content addressable memory; method in the (TCAM ternary content addressable memory), the pool of the current TCAM stage - at the gate of up transistor (pull-up transistor) and the pool of the current TCAM stage-down transistor (pull at the gate of transistor -down) it includes receiving the match line outputs from the previous stage of the TCAM. Method, if a match line outputs from the previous TCAM stage display the mismatch, the pull-through down transistor, and sets the current match line bar (match line bar) of the TCAM stage with low (low) value. The method also, if the match line outputs from the previous stage in the TCAM shown to match, the pull-up transistor through the sets of bars are matched to the lines in the TCAM stage high (high) value.
公开/授权文献:
- KR1020150091530A 터너리 컨텐츠 어드레스가능 메모리를 위한 의사-NOR 셀 公开/授权日：2015-08-11