基本信息:
- 专利标题: 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 기록 매체
- 专利标题(英):Semiconductor device manufacturing method, substrate processing method, substrate processing apparatus, and recording medium
- 申请号:KR1020137029622 申请日:2012-08-01
- 公开(公告)号:KR101514231B1 公开(公告)日:2015-04-22
- 发明人: 히로세요시로 , 야마모토류지
- 申请人: 가부시키가이샤 히다치 고쿠사이 덴키
- 申请人地址: **-**, Nishi-shimbashi *-chome, Minato-ku, Tokyo, Japan
- 专利权人: 가부시키가이샤 히다치 고쿠사이 덴키
- 当前专利权人: 가부시키가이샤 히다치 고쿠사이 덴키
- 当前专利权人地址: **-**, Nishi-shimbashi *-chome, Minato-ku, Tokyo, Japan
- 代理人: 이창범; 박준용
- 优先权: JPJP-P-2011-183815 2011-08-25
- 国际申请: PCT/JP2012/069562 2012-08-01
- 国际公布: WO2013027549 2013-02-28
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/205
The present invention comprising the steps of supplying a first material gas containing a semiconductor element or a metal element of a predetermined element and a halogen group (基) with respect to the substrate, with respect to the substrate to the second source gas containing the specific element, and an amino group by performing a plurality of times a step of supplying the alternating (交互) small, forming a first layer comprising the predetermined element, nitrogen, and carbon on the substrate; On the substrate by performing alternately once or multiple times; and each of the raw material gas and the step of forming a second layer to modify the said first layer by supplying the other reaction gas with respect to the substrate to form a thin film of a predetermined composition containing a given element.
公开/授权文献:
- KR1020140000716A 반도체 장치의 제조 방법, 기판 처리 방법, 기판 처리 장치 및 기록 매체 公开/授权日:2014-01-03
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/31 | .....在半导体材料上形成绝缘层的,例如用于掩膜的或应用光刻技术的;以及这些层的后处理;这些层的材料的选择 |