KR101503618B1 III족 질화물 반도체 소자 제조용 기판의 제조 방법, III족 질화물 반도체 자립 기판 또는 III족 질화물 반도체 소자의 제조 방법, 및 III족 질화물 성장용 기판
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基本信息:
- 专利标题: III족 질화물 반도체 소자 제조용 기판의 제조 방법, III족 질화물 반도체 자립 기판 또는 III족 질화물 반도체 소자의 제조 방법, 및 III족 질화물 성장용 기판
- 专利标题(英):Method for producing substrate for group iii nitride semiconductor element fabrication, method for producing group iii nitride semiconductor free-standing substrate or group iii nitride semiconductor element, and group iii nitride growth substrate
- 专利标题(中):用于生产III族氮化物半导体元件制造基板的方法,用于生产III族氮化物半导体自由基底层或III族氮化物半导体元件的方法,以及III族氮化物生长基板
- 申请号:KR1020137008856 申请日:2011-09-30
- 公开(公告)号:KR101503618B1 公开(公告)日:2015-03-18
- 发明人: 토바,류이치 , 미야시타,마사히토 , 야오,타카후미 , 후지이,카츠시
- 申请人: 도와 일렉트로닉스 가부시키가이샤 , 도와 홀딩스 가부시키가이샤
- 申请人地址: **-*, Sotokanda *-chome, Chiyoda-ku, Tokyo , Japan
- 专利权人: 도와 일렉트로닉스 가부시키가이샤,도와 홀딩스 가부시키가이샤
- 当前专利权人: 도와 일렉트로닉스 가부시키가이샤,도와 홀딩스 가부시키가이샤
- 当前专利权人地址: **-*, Sotokanda *-chome, Chiyoda-ku, Tokyo , Japan
- 代理人: 특허법인 무한
- 优先权: JPJP-P-2010-222767 2010-09-30
- 国际申请: PCT/JP2011/073154 2011-09-30
- 国际公布: WO2012043885 2012-04-05
- 主分类号: C30B29/38
- IPC分类号: C30B29/38 ; C30B25/18 ; C23C14/14 ; H01L33/32
In the case of nitriding the chromium layer into a MOCVD growth, the crystallinity of the crystalline layer is grown on the Thereafter chromium nitride layer, due to improving the chromium nitride microcrystalline occupied area ratio of the triangular shape of the formed chromium nitride layer side or It provides a method of producing a Group III nitride semiconductor device for manufacturing a substrate which can improve uniformity. On a substrate to the growth, chromium film forming step and the chromium layer to form a layer, on the nitrification step and the chromium nitride layer is nitrided by chromium nitride layer in a predetermined condition, at least one layer of a group III nitride semiconductor layer of the epi is epitaxially grown crystal layer growth process of a group III nitride manufacturing method of a semiconductor device for manufacturing a substrate having a of the chromium layer, by sputtering, the sputtering particles non film-forming speed is 7 ~ 65Å / sec range in the area from, the thickness of the film formation so that the range of 50 ~ 300Å, within in the chromium nitride layer, a pressure 6.666 kPa above 66.66 kPa MOCVD growth, a temperature above 1000 ℃ below, is formed in a gas atmosphere containing ammonia gas, the gas components other than the ammonia gas in the gas atmosphere is nitrogen gas and hydrogen gas to a carrier gas composed of, and in the content of the nitrogen gas in the carrier gas is characterized in that occupy a range of 60 to 100% by volume.