基本信息:
- 专利标题： 강유전체 커패시터 모듈, 제조 방법 및 디자인 스트럭쳐
- 专利标题（英）：Ferro-electric capacitor modules, methods of manufacture and design structures
- 专利标题（中）：电力电容器模块，制造方法和设计结构
- 申请号：KR1020127031000 申请日：2011-06-23
- 公开(公告)号：KR101485648B1 公开(公告)日：2015-01-28
- 发明人： 감비노,제프리,피. , 문,매튜,디. , 머피,윌리암,제이. , 나코스,제임스,에스. , 파스텔,폴,더블류. , 필립스,브렛,에이.
- 申请人： 인터내셔널 비지네스 머신즈 코포레이션
- 申请人地址： New Orchard Road, Armonk, New York *****, U.S.A.
- 专利权人： 인터내셔널 비지네스 머신즈 코포레이션
- 当前专利权人： 인터내셔널 비지네스 머신즈 코포레이션
- 当前专利权人地址： New Orchard Road, Armonk, New York *****, U.S.A.
- 代理人： 허정훈
- 优先权： US12/823,728 2010-06-25
- 国际申请： PCT/US2011/041546 2011-06-23
- 国际公布： WO2011163429 2011-12-29
- 主分类号： H01L21/8247
- IPC分类号： H01L21/8247 ; H01L27/115
Ferroelectric capacitor modules, manufacturing methods and design structures are provided. The method for manufacturing a ferroelectric capacitor comprises forming a barrier layer on the insulating layer 18 of the CMOS structures (10). The method also includes the step of forming the top plate 32 and bottom plate over the barrier layer 28 further. The method also includes the step of forming a ferroelectric material between the top plate 32 and the bottom plate 28. The method also includes the step of encapsulating the barrier layer, the top plate 32, bottom plate 28 and the ferroelectric material (30) into the capsule material. The method may also, through the capsule material 36, and a step of forming contacts on the top plate 32 and bottom plate 28 more. Contacts 20 to the diffusion region of the CMOS structures and the contacts 20 on the top plate 32 has a joint wire is electrically connected.
公开/授权文献:
- KR1020130017090A 강유전체 커패시터 모듈, 제조 방법 및 디자인 스트럭쳐 公开/授权日：2013-02-19
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |
| ----------------------H01L21/8239 | ........存储器结构 |
| ------------------------H01L21/8246 | .........只读存储器结构（ROM） |
| --------------------------H01L21/8247 | ..........电可编程序的 |