基本信息:
- 专利标题： 비휘발성 메모리 셀들의 어레이
- 专利标题（英）：Arrays of nonvolatile memory cells
- 专利标题（中）：非易失记忆细胞阵列
- 申请号：KR1020137015225 申请日：2011-11-03
- 公开(公告)号：KR101474673B1 公开(公告)日：2014-12-17
- 发明人： 리우,준
- 申请人： 마이크론 테크놀로지, 인크
- 申请人地址： **** South Federal Way, Boise, ID, U.S.A.
- 专利权人： 마이크론 테크놀로지, 인크
- 当前专利权人： 마이크론 테크놀로지, 인크
- 当前专利权人地址： **** South Federal Way, Boise, ID, U.S.A.
- 代理人： 한양특허법인
- 优先权： US12/959,015 2010-12-02
- 国际申请： PCT/US2011/059095 2011-11-03
- 国际公布： WO2012074662 2012-06-07
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247
An array of non-volatile memory cell is disclosed including a memory cell 5 for each unit cell. In addition, the layer of the non-volatile memory cell array including the memory cells occupied by the five successive horizontal area of 4F
2 in each layer are stacked vertically are provided. In addition, programming and the non-array of volatile memory cells for three regions of the elevation of the substance including a plurality of unit cells each including the start, of the at least three different memory cells in a region of the three height direction of the unit cell It includes a programmable material. In addition, an array of non-volatile memory cell that includes a continuous volume having a combination of memory cells aligned in the vertical alignment of a plurality of memory cells and a plurality of horizontal layers are stacked vertically are provided. It is disclosed, other embodiments and aspects.
公开/授权文献:
- KR1020130088167A 비휘발성 메모리 셀들의 어레이 公开/授权日：2013-08-07
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/112 | .....只读存储器结构的 |
| ------------------H01L27/115 | ......电动编程只读存储器 |