基本信息:
- 专利标题： 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들
- 专利标题（英）：Schottky diode switch and memory units containing the same
- 专利标题（中）：肖特基二极管开关和包括它的存储器单元
- 申请号：KR1020137019955 申请日：2010-07-09
- 公开(公告)号：KR101444912B1 公开(公告)日：2014-09-26
- 发明人： 김,영 , 누룰,아민 , 다디,세티아디 , 베누고팔란,바이트야나탄 , 웨이,티안 , 진,인식
- 申请人： 시게이트 테크놀로지 엘엘씨
- 申请人地址： ***** South De Anza Boulevard, Cupertino, CA *****, U.S.A.
- 专利权人： 시게이트 테크놀로지 엘엘씨
- 当前专利权人： 시게이트 테크놀로지 엘엘씨
- 当前专利权人地址： ***** South De Anza Boulevard, Cupertino, CA *****, U.S.A.
- 代理人： 특허법인 남앤드남
- 优先权： US12/502,221 2009-07-13
- 国际申请： PCT/US2010/041539 2010-07-09
- 国际公布： WO2011008650 2011-01-20
- 主分类号： H01L29/872
- IPC分类号： H01L29/872 ; H01L27/115 ; H01L21/8247
A first semiconductor layer having a first portion and a second portion; A second semiconductor layer having a first portion and a second portion; An insulating layer disposed between the first semiconductor layer and the second semiconductor layer; A first metal contact in contact with the first portion of the second semiconductor layer in contact with the first portion of the first semiconductor layer, forming a second junction to form a first junction; And the third of the first in contact with the second portion of the semiconductor layer, and a second metal contact in contact with the second portion of the second semiconductor layer to form a fourth junction, the first junction to form a joint and the fourth junction deulyigo Schottky contact (Schottky), said second joint and said third joint is the ohmic (ohmic) which are in contact, the switching element is described.
公开/授权文献:
- KR1020130099224A 쇼트키 다이오드 스위치 및 이를 포함하는 메모리 유닛들 公开/授权日：2013-09-05
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/86 | ..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的 |
| ------------H01L29/861 | ...二极管 |
| --------------H01L29/872 | ....肖特基二极管 |