基本信息:
- 专利标题： 반도체장치
- 专利标题（英）：Semiconductor device
- 申请号：KR1020130089423 申请日：2013-07-29
- 公开(公告)号：KR101437961B1 公开(公告)日：2014-09-11
- 发明人： 수에카와에이스케 , 오리쓰키야스노리 , 타루이요이치로
- 申请人： 미쓰비시덴키 가부시키가이샤
- 申请人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人： 미쓰비시덴키 가부시키가이샤
- 当前专利权人地址： *-*, Marunouchi *-Chome, Chiyoda-ku, Tokyo ***-**** Japan
- 代理人： 이화익; 권태복; 김홍두
- 优先权： JPJP-P-2010-262120 2010-11-25; JPJP-P-2011-232666 2011-10-24
- 主分类号： H01L29/772
- IPC分类号： H01L29/772 ; H01L21/335
It is possible to suppress the lowering of the threshold voltage over time, and also provide a semiconductor device capable of preventing short circuit between the gate and source due to the corrosion of the insulating film or the Al spike by aluminum wirings. MOSFET cell of a semiconductor device is provided with the n + source region 4 formed in the top of the polysilicon gate electrode 6 and the n- drift layer (2). A gate electrode (6) above it is covered by the interlayer insulating film 7, and the source electrode 101 of Al is extended on the interlayer insulation film 7. It is also the gate electrode (6) connected to the gate pad 102 of Al. The source electrode 101 and the interlayer insulating film 7, and between gate pad 102 and each of the barrier metal layer (99) for suppressing the diffusion of Al between the gate electrode 6 is disposed in this.
公开/授权文献:
- KR1020130098951A 반도체장치 公开/授权日：2013-09-05
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/772 | ....场效应晶体管 |