基本信息:
- 专利标题： 질화물 반도체 발광 소자 및 그 제조 방법
- 专利标题（英）：Nitride semiconductor light-emitting element and method for manufacturing same
- 专利标题（中）：氮化物半导体发光器件及其制造方法
- 申请号：KR1020147005124 申请日：2009-12-21
- 公开(公告)号：KR101422452B1 公开(公告)日：2014-07-22
- 发明人： 나고하지메 , 다찌바나고이찌 , 오까도시유끼 , 기무라시게야 , 누노우에신야
- 申请人： 가부시끼가이샤 도시바
- 申请人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 专利权人： 가부시끼가이샤 도시바
- 当前专利权人： 가부시끼가이샤 도시바
- 当前专利权人地址： 일본국 도꾜도 미나또꾸 시바우라 *쪼메 *방 *고
- 代理人： 장수길; 박충범; 이중희
- 国际申请： PCT/JP2009/007049 2009-12-21
- 国际公布： WO2011077473 2011-06-30
- 主分类号： H01L33/32
- IPC分类号： H01L33/32
It provides a nitride semiconductor light-emitting device has sufficient optical output is obtained and a method of manufacturing the same. First cladding layer 13 having the n-type nitride semiconductor and the first is formed on the clad layer 13, GaN layer and the active layer 14 having a nitride semiconductor containing In, is formed on the active layer 14 (17 ) and is formed on the GaN layer 17, a first and a first AlGaN layer 18 having the Al composition ratios (x1), the first formed on AlGaN layer 18, the first is higher than the Al composition ratios (x1) claim 2 Al has a composition ratio (x2), also on the GaN layer 17 and the 1 AlGaN layer than the p-type containing Mg in a large amount claim 2 AlGaN (18) layer (19), a 2 AlGaN layer 19 and forming, and a second cladding layer 20 having a p-type nitride semiconductor.
公开/授权文献:
- KR1020140047147A 질화물 반도체 발광 소자 및 그 제조 방법 公开/授权日：2014-04-21
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L31/00 | 对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件 |
| --------H01L31/02 | .零部件 |
| ----------H01L33/16 | ..具有一个特殊晶体结构或取向，例如多晶的、非晶的或多孔的 |
| ------------H01L33/30 | ...只包括周期体系中的III族和V族的元素 |
| --------------H01L33/32 | ....含氮 |