The present invention is passed through path for the plasma processing of the target material plasma treatment so as to have a channel shape extending in a spiral in the reactor, and to come into close contact with the spiral path of the processed material in the reactor for high voltage generating electrodes may extend in a spiral to provide a plasma processing apparatus that enable. The present invention processes channel to handle by one end to an outlet portion (Outlet) to provided, and at the same time the other end a cap part (Inlet), and passes the processed material and the process gas supplied through the inlet portion is formed in a helical shape for this purpose the reactor for carrying the material, electrical and physical properties converted through the outlet portion to form a; Material supply section for supplying a constant certain processed material into the interior of the reactor through the said inlet; The material supply unit and is provided with a separate gas supply for constantly supplying a process gas into the interior of the reactor through the inlet portion; applying a predetermined power supply to the interior of the reactor, a spiral shape extending from the inlet portion to the outlet portion side a power supply that allows the formation of the treatment channel, and to the processed material and processing gas moving along the processing channel generates a plasma reaction; Wherein the different first and second electrodes of a polarity opposite ends and connected to each power supply unit is formed in the processing channel of the spiral to the outlet side from the inlet side of the interior of the reactor, formed by the first electrode and the second electrode that the first and the second electrode portion to be treated by injecting the material with a process gas supply a high voltage to generate a plasma discharge in the reaction between the processing channel; And it is converted into the first and the electrical and physical properties as the plasma discharge is generated in the processing channel is formed of by a high voltage supplied via the second electrode part and the plasma treatment the treated material by a plasma in the reactor is taken out through the outlet receiving portion for receiving the treatment material; including characterized in that configured.