基本信息:
- 专利标题： 반도체 자외선 발광소자
- 专利标题（英）：Semiconductor ultaviolet light emimitting device
- 专利标题（中）：SEMICONDUCTOR ULTAVIOLET LIGHT EMIMITTING DEVICE
- 申请号：KR1020120026212 申请日：2012-03-14
- 公开(公告)号：KR101372500B1 公开(公告)日：2014-03-11
- 发明人： 안상정
- 申请人： 안상정
- 申请人地址： 인천광역시 연수구 아트센터대로**번길 **, ****호 ****호 (송도동, 송도더샵하버뷰* **단지)
- 专利权人： 안상정
- 当前专利权人： 안상정
- 当前专利权人地址： 인천광역시 연수구 아트센터대로**번길 **, ****호 ****호 (송도동, 송도더샵하버뷰* **단지)
- 主分类号： H01L33/46
- IPC分类号： H01L33/46 ; H01L33/42
This disclosure is interposed between the first semiconductor layer, a second semiconductor layer having a second conductivity different from the first conductivity, and the first semiconductor layer and a second semiconductor layer having a first conductivity in a semiconductor ultraviolet light-emitting element E and a plurality of semiconductor layers through the hole recombination in the active layer provided for generating ultraviolet rays; A first electrode that is in electrical contact with the semiconductor layer; Is in electrical contact with a second semiconductor layer on the opposite side of the first semiconductor layer, based on the active layer reflects the light generated from the active layer toward the first semiconductor layer, a metal reflection film having Al as a light reflecting material; The second oxygen-containing structure which is located between the semiconductor layer and the metal reflection film; an oxygen-containing structure comprising a light transmitting conductive oxide film having a thickness of less than 5nm; relates to a semiconductor ultraviolet light-emitting device comprising a.
公开/授权文献:
- KR1020130104592A 반도체 자외선 발광소자 公开/授权日：2013-09-25