基本信息:
- 专利标题： 선택 소자, 이를 포함하는 비휘발성 메모리 셀 및 이의 제조방법
- 专利标题（英）：Selection device and nonvolatile memory cell including the same and method of fabricating the same
- 专利标题（中）：包括其的选择装置和非易失性存储单元及其制造方法
- 申请号：KR1020120035121 申请日：2012-04-04
- 公开(公告)号：KR101338360B1 公开(公告)日：2013-12-06
- 发明人： 황현상 , 이우태
- 申请人： 광주과학기술원
- 申请人地址： 광주광역시 북구 첨단과기로 *** (오룡동)
- 专利权人： 광주과학기술원
- 当前专利权人： 광주과학기술원
- 当前专利权人地址： 광주광역시 북구 첨단과기로 *** (오룡동)
- 代理人： 특허법인이상
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; H01L21/8247
A selection device, a nonvolatile memory cell and a method comprising same are provided. Selecting element is a first electrode and a tunnel between the second electrode oxide layer and a metal cluster, an oxide layer by employing the oxide laminate structure of a multilayer including a relatively low voltage sufficient to also to program a memory cell on current density and high selectivity It may have. In addition, the non-volatile memory cell comprising a selection device is electrically connected to the selection device and the selection device having a tunneling oxide layer and a metal cluster, an oxide layer, including the resistance variable memory device having a resistance-change layer, the array architecture It can suppress the implementation, the non-leak current of the selected neighboring cell. In addition, the production method of the selection device after depositing a metal layer, heat treatment to the metal cluster oxide layer, the oxygen defect density can be controlled in, the surface oxide is a metal cluster doped form contained in the metal cluster oxide layer in the tunneling oxide layer It can increase the on current density layer is located.
公开/授权文献:
- KR1020130112607A 선택 소자, 이를 포함하는 비휘발성 메모리 셀 및 이의 제조방법 公开/授权日：2013-10-14
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L27/00 | 由在一个共用衬底内或其上形成的多个半导体或其他固态组件组成的器件 |
| --------H01L27/02 | .包括有专门适用于整流、振荡、放大或切换的半导体组件并且至少有一个电位跃变势垒或者表面势垒的；包括至少有一个跃变势垒或者表面势垒的无源集成电路单元的 |
| ----------H01L27/04 | ..其衬底为半导体的 |
| ------------H01L27/06 | ...在非重复结构中包括有多个单个组件的 |
| --------------H01L27/105 | ....包含场效应组件的 |
| ----------------H01L27/112 | .....只读存储器结构的 |
| ------------------H01L27/115 | ......电动编程只读存储器 |