基本信息:
- 专利标题： 넓은 시야각을 갖는 발광 다이오드와 이의 제조 방법
- 专利标题（英）：Light emitting diode with large viewing angle and fabricating method thereof
- 专利标题（中）：具有大角度角度的发光二极管及其制造方法
- 申请号：KR1020120023419 申请日：2012-03-07
- 公开(公告)号：KR101296432B1 公开(公告)日：2013-08-13
- 发明人： 린,첸옌 , 린,융밍 , 예,포춘 , 유,젱웨이 , 라이,치밍 , 펭,룽한
- 申请人： 옵토 테크 코포레이션
- 申请人地址： No. *, Innovation Rd. *, Hsin Chu Science-Based Industrial Park, HsinChu, Taiwan
- 专利权人： 옵토 테크 코포레이션
- 当前专利权人： 옵토 테크 코포레이션
- 当前专利权人地址： No. *, Innovation Rd. *, Hsin Chu Science-Based Industrial Park, HsinChu, Taiwan
- 代理人： 청운특허법인
- 优先权： TW100107808 2011-03-08; TW100138543 2011-10-24
- 主分类号： H01L33/22
- IPC分类号： H01L33/22 ; H01L33/08 ; H01L33/36
A light emitting diode includes a substrate, a plurality of columnar structures, filled structures, transparent conductive layer, a first electrode and a second electrode. The pillar structure is formed on the substrate. Each pole structure comprises a semiconductor layer, an active layer and a semiconductor layer of a second type of the first type. A semiconductor layer of a first type is formed on the substrate. Column structure is electrically connected to each other through the semiconductor layer of the first type. Charging structure is formed between the pillar structures. The second type semiconductor layer of the charging structure and the columnar structure is covered with a transparent conductive layer. The first electrode is a transparent conductive layer and the connection state. The second electrode is a semiconductor layer and a connection state of the first type.
公开/授权文献:
- KR1020120102539A 넓은 시야각을 갖는 발광 다이오드와 이의 제조 방법 公开/授权日：2012-09-18