基本信息:
- 专利标题： 수직 핀치 접합 전계 효과 트랜지스터
- 专利标题（英）：Vertically pinched junction field effect transistor
- 专利标题（中）：垂直连接的场效应晶体管
- 申请号：KR1020110063622 申请日：2011-06-29
- 公开(公告)号：KR101229187B1 公开(公告)日：2013-02-01
- 发明人： 이규옥 , 김주형 , 김정주 , 바디엘카레
- 申请人： 주식회사 디비하이텍
- 申请人地址： 서울특별시 강남구 테헤란로 *** (대치동)
- 专利权人： 주식회사 디비하이텍
- 当前专利权人： 주식회사 디비하이텍
- 当前专利权人地址： 서울특별시 강남구 테헤란로 *** (대치동)
- 代理人： 서교준
- 主分类号： H01L29/80
- IPC分类号： H01L29/80 ; H01L29/78 ; H01L21/336
Vertical junction field-effect transistors based on CMOS-technology is by. Vertical junction field-effect transistor has a source contact and a drain contact formed on the surface of the semiconductor substrate separated from each other; Vertical pinch which are respectively formed in the lower portion of the source contact and the drain contact-to-off region; The vertical pinch-state to be formed by connecting the bottom region of the off-channel region; The vertical pinch-off region of the main side and the gate-well to be formed surrounding the channel region; The gate contact is formed on the surface of the semiconductor substrate in the gate well; And it comprises the gate contact, source contact and the silicide film is prevented formed over a semiconductor substrate between the drain contacts.
公开/授权文献:
- KR1020130007103A 수직 핀치 접합 전계 효과 트랜지스터 公开/授权日：2013-01-18
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L29/00 | 专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件 |
| --------H01L29/02 | .按其半导体本体的特征区分的 |
| ----------H01L29/68 | ..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的 |
| ------------H01L29/70 | ...双极器件 |
| --------------H01L29/762 | ....电荷转移器件 |
| ----------------H01L29/80 | .....由PN结或其他整流结栅产生场效应的 |