基本信息:
- 专利标题： 기판 재사용을 위한 반도체 소자 제조 방법
- 专利标题（英）：Fabricating method of semiconductor device for reuse of substrate
- 专利标题（中）：用于衬底再利用的半导体器件的制造方法
- 申请号：KR1020100124812 申请日：2010-12-08
- 公开(公告)号：KR101161264B1 公开(公告)日：2012-07-02
- 发明人： 전동환 , 김창주 , 양창재 , 성호근 , 강호관 , 신찬수 , 박원규 , 고철기
- 申请人： (재)한국나노기술원
- 申请人地址： ***-**, Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Rep. of Korea
- 专利权人： (재)한국나노기술원
- 当前专利权人： (재)한국나노기술원
- 当前专利权人地址： ***-**, Iui-dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, Rep. of Korea
- 代理人： 송경근; 박보경
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L33/00
In the semiconductor device manufacturing method according to the invention forming the first medium layer on one side of the substrate, and then it turned over the substrate element to form a second layer on the other surface of the substrate. Bonding a first carrier substrate to the first device layer and separated between the second element and then bonded to a second carrier substrate in a layer wherein the substrate and the first device layer and between the substrate and the second medium layer, or the after the separation between the substrate and the first device layer and between the substrate and the second device layer is bonded to the first carrier substrate to the first device layer, and bonding a second substrate carrier to the second device layer. According to the invention, the use of both surfaces of the substrate and to minimize consumption, consumption of the material of the substrate as the substrate re-use. Then, the warpage forces in the same direction about the substrate (compressive or tensile) is applied due to the difference of the substrate and the thermal expansion coefficient of a thin film by being is suppressed.
公开/授权文献:
- KR1020120063716A 기판 재사용을 위한 반도체 소자 제조 방법 公开/授权日：2012-06-18
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/20 | ....半导体材料在基片上的沉积，例如外延生长 |