基本信息:
- 专利标题: 반도체 메모리 소자 및 그 제조 방법
- 专利标题(英):Semiconductor memory device and method for fabricating the same
- 专利标题(中):반도체메모리소자및그제조방법
- 申请号:KR1020050074448 申请日:2005-08-12
- 公开(公告)号:KR100632467B1 公开(公告)日:2006-10-09
- 发明人: 조영우 , 이경태 , 신헌종 , 오명환
- 申请人: 삼성전자주식회사
- 申请人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 专利权人: 삼성전자주식회사
- 当前专利权人: 삼성전자주식회사
- 当前专利权人地址: ***, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, Republic of Korea
- 代理人: 정상빈; 김동진
- 主分类号: H01L21/3205
- IPC分类号: H01L21/3205
摘要:
A semiconductor memory device and its manufacturing method are provided to prevent short of an upper wire and a lower wire and to increase electrical characteristics of the semiconductor memory device. Lower wires(22) are formed on a semiconductor substrate(10) in one direction. An interlayer dielectric(24) is formed on the semiconductor substrate where the lower wires are formed. The interlayer dielectric is selectively etched to form a via hole(26) exposing the lower wires. A trench(28) is located in the interlayer dielectric by being arranged vertically with respect to the lower wires. The trench is projected from the lower wires toward one side. A lower portion of the projected region is connected to the via hole. The conductive layer for gap-filling the via hole and the trench is formed and planarized to form an upper damascene wire(46) within the interlayer dielectric.
摘要(中):
提供一种半导体存储器件及其制造方法,以防止上导线和下导线短路并增加半导体存储器件的电特性。 下导线(22)沿一个方向形成在半导体衬底(10)上。 在形成下导线的半导体衬底上形成层间电介质(24)。 选择性蚀刻层间电介质以形成暴露下部导线的通孔(26)。 沟槽(28)通过相对于下部导线垂直布置而位于层间电介质中。 沟槽从下部导线向一侧突出。 投影区域的下部连接到通孔。 用于间隙填充通孔和沟槽的导电层被形成并被平面化以在层间电介质内形成上大马士革线(46)。
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的,例如腐蚀、抛光、切割 |
------------------H01L21/3205 | ......非绝缘层的沉积,例如绝缘层上的导电层、电阻层(器件内部的通电装置入H01L23/52);这些层的后处理 |