基本信息:
- 专利标题： 不揮発性相変化磁性材料、その製造方法及びそれを用いた不揮発性相変化磁気メモリ
- 专利标题（英）：Nonvolatile phase change magnetic material, its manufacturing method and a nonvolatile phase change magnetic memory using the same
- 申请号：JP2006532739 申请日：2005-08-30
- 公开(公告)号：JPWO2006025413A1 公开(公告)日：2008-07-31
- 发明人： 英典 ▲高▼木 , 英典 ▲高▼木 , 知弘 高山 , 知弘 高山
- 申请人： 独立行政法人科学技術振興機構
- 专利权人： 独立行政法人科学技術振興機構
- 当前专利权人： 独立行政法人科学技術振興機構
- 优先权： JP2004251051 2004-08-30
- 主分类号： H01F10/32
- IPC分类号： H01F10/32
It can improve the cost, lifetime, energy consumption and recording density than current optical disc or a hard disk, to provide a memory and a manufacturing method thereof based on a new operating principle.
Nonvolatile phase change magnetic memory is composed of a film of transition metal chalcogenide composition which transition metal from equipped with stoichiometric composition to the substrate and the substrate is deficient, the temperature history applied to the small portion of the membrane, the a small portion of the membrane, holes (4) are regularly arranged ferromagnetic phase (1) or holes (4) antiferromagnetic phase is randomly arranged in the transition metals (2) of the transition metal (2) formed in (7), the magnetization based on the ferromagnetic phase (1) or antiferromagnetic phase (7) and recording information.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01F | 磁体；电感；变压器；磁性材料的选择 |
| ------H01F10/00 | 磁性薄膜，如单畴结构的 |
| --------H01F10/32 | .自旋交换耦合的多层，例如纳米结构的超晶格 |