基本信息:
- 专利标题： 表示装置及びその製造方法、並びに投射型表示装置
- 专利标题（英）：Display device and a method of manufacturing the same, and a projection display device
- 申请号：JP2004512204 申请日：2003-06-06
- 公开(公告)号：JPWO2003105236A1 公开(公告)日：2005-10-13
- 发明人： 牧村 真悟 , 真悟 牧村 , 橋本 誠 , 誠 橋本 , 大川 善郎 , 善郎 大川 , 和田 智宏 , 智宏 和田 , 片岡 一典 , 一典 片岡
- 申请人： ソニー株式会社
- 专利权人： ソニー株式会社
- 当前专利权人： ソニー株式会社
- 优先权： JP2002166380 2002-06-07
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; G02F1/1345 ; G02F1/1362 ; G02F1/1368 ; G09F9/00 ; G09F9/30 ; H01L21/20 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/04 ; H01L29/786
Without depending on light shielding structure, in the display device and a manufacturing method thereof capable enhance light resistance itself of the pixel transistor, a relatively small control average grain size of the polycrystalline silicon film 111 serving as an active layer of the pixel transistor by suppressing the light leakage current. As a small grain size containing many crystal defects. Carrier excited by light irradiation is rapidly supplemented by defect levels, and suppress an increase in light leakage current. On the other hand, the average crystal grain size of the polycrystalline silicon film 111 constituting the peripheral transistor is controlled to be relatively large. Carrier mobility as the grain size is enlarged increases the drive capability of the peripheral transistor is increased. The peripheral transistor compared to pixel transistors for sampling the scanning and image signals of the pixel, because the required high-speed operation.
公开/授权文献:
- JP4631437B2 公开/授权日：2011-02-23
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/335 | .....场效应晶体管 |
| ------------------H01L21/336 | ......带有绝缘栅的 |