PURPOSE:To ensure sufficiently the growth time for a buried electrode layer by a method wherein an interlayer connection hole is formed in an insulating layer in such a way that at least one part of the upper surface of a first conductive layer is exposed and the buried electrode layer is formed in such a way as to cover the surface of the first conductive layer. CONSTITUTION:A first conductive layer 3 having a plug material selective growth rate quicker than that of a second conductive layer 4b is exposed through the bottom of a via hole. Therefore, the growth of a buried electrode layer on the layer 3 is started much quicker than that of the buried electrode layer on the layer 4b. Accordingly, deposition of the material for the thicker buried electrode layer 5 on the layer 3 becomes possible during the time to take until breaking of a selectivity of the material for the layer 5 on the surface of an insulating layer 2b is generated. Moreover, the material for the layer 5 is not grown on the surface of the layer 2b by the formation of the layer 5 and a short-circuit between wirings is never caused. Thereby, the growth time for the layer 5 can be sufficiently ensured and the good buried electrode layer 5 can be formed.