发明专利
JPH04268293A IMPROVED DETECTING CIRCUIT FOR MEMORY DEVICE SUCH AS NON-VOLATILE MEMORY WITH COMPENSATING OFFSET CURRENT
失效
基本信息:
- 专利标题： IMPROVED DETECTING CIRCUIT FOR MEMORY DEVICE SUCH AS NON-VOLATILE MEMORY WITH COMPENSATING OFFSET CURRENT
- 申请号：JP30353991 申请日：1991-11-19
- 公开(公告)号：JPH04268293A 公开(公告)日：1992-09-24
- 发明人： PASUKUTSUCHII RUIGI , ORIBUO MARUKO
- 申请人： SGS THOMSON MICROELECTRONICS
- 专利权人： SGS THOMSON MICROELECTRONICS
- 当前专利权人： SGS THOMSON MICROELECTRONICS
- 优先权： EP90830530 1990-11-19
- 主分类号： G11C17/00
- IPC分类号： G11C17/00 ; G11C7/14 ; G11C16/06 ; G11C16/28
摘要：
PURPOSE: To expand the operating range of a sensing circuit by compensating fluctuation in the current of a programmed cell. CONSTITUTION: A 1st input X is connected to a lot of selectable non-used reference cells Tvr. A 2nd input Y is connected to 1st circuit means NV0 , T1 , T2 , T3 and CM1 . When matrix cells Tvm and Tpm are selected, the means NV0 , T1 , T2 , T3 and CM1 pull out the current of half value of a current to flow to the non-used cells. When 2nd circuit means NP0 , T1 , T2 , T3 and CM1 are selected while being connected to the 1st input X, the current of half value of a current to flow to the programmed cells. Thus, the current to flow to the programmed cells is not gradually separated from zero as conventional until it exceeds the value of a threshold current, and the operating range is expanded.