PURPOSE:To prevent the progress of the exfoliation of insulating film layers by a method wherein, apart from a scribing line, a groove used to separate the insulating film layers of phosphosilicate glass, an SiO2 film and the like at a desired part on a semiconductor substrate is formed on the substrate. CONSTITUTION:Bonding pads 3 are arranged around a circuit region 4; their peripheral part is surrounded by a groove 1; in addition, its periphery is constituted as a scribing line 2. Then, when a wafer is scribed or when a chip taken out by a scribing operation is handled, it is possible to prevent that insulating film layers such as a passivating film 9, a first interlayer insulating film 7, a second interlayer insulating film 8, a protective film 10 and the like are stripped off thanks to the groove 1. By this setup, it is possible to prevent that an exfoliation of the insulating film layers progresses.