基本信息:
- 专利标题: 成膜装置
- 申请号:JP2020189364 申请日:2020-11-13
- 公开(公告)号:JP6959680B1 公开(公告)日:2021-11-05
- 发明人: 五十嵐 誠 , 齋藤 優 , 野中 裕彌
- 申请人: 株式会社シンクロン
- 申请人地址: 神奈川県横浜市西区みなとみらい四丁目3番5号
- 专利权人: 株式会社シンクロン
- 当前专利权人: 株式会社シンクロン
- 当前专利权人地址: 神奈川県横浜市西区みなとみらい四丁目3番5号
- 代理人: とこしえ特許業務法人
- 主分类号: C23C14/24
- IPC分类号: C23C14/24
Provided is a film formation device having a high rate of operation. The present invention is provided with: a film formation chamber (2) in which a predetermined film formation atmosphere can be set and in which at least a film formation material M and a subject (S) on which a film is to be formed are provided; a Haas liner (23) that is provided inside the film formation chamber (2), and that houses the film formation material M; a heating source (24) that is provided inside the film formation chamber (2), and that heats the film formation material (M) housed in the Haas liner (23); and a material-feeding chamber (3) which has a material-loaded part (35) to be loaded with a film formation material (M) to be fed to the Haas liner (23), which is coupled to the film formation chamber (2) through a communication path (36) having a partition valve (37), and in which a predetermined pressure atmosphere can be set. When the film formation material (M) is to be fed, in a state where a film formation atmosphere is set in the film formation chamber (2), thereafter, the inside the material-feeding chamber (3) is set to the predetermined pressure atmosphere, the partition valve (37) is opened, and the film formation material (M) loaded in the material-loaded part (35) is fed to the Haas liner (23) through the communication path (36).