基本信息:
- 专利标题： Method of manufacturing a non-volatile semiconductor memory device
- 申请号：JP2008309634 申请日：2008-12-04
- 公开(公告)号：JP5295740B2 公开(公告)日：2013-09-18
- 发明人： 之輝 松井 , 壮男 窪田 , 佳邦 竪山 , 良博 南 , 宏行 金谷
- 申请人： 株式会社東芝
- 专利权人： 株式会社東芝
- 当前专利权人： 株式会社東芝
- 优先权： JP2008309634 2008-12-04
- 主分类号： H01L21/8246
- IPC分类号： H01L21/8246 ; H01L27/105
摘要：
A first electrode film, a ferroelectric film, and a second electrode film are accumulated above a semiconductor in this order, a hard mask is accumulated above the second electrode, scrub cleaning is performed on the surface of the hard mask with an surfactant, the hard mask on which the scrub cleaning is performed has been patterned according to a planar shape of a ferroelectric capacitor, and etching is performed by using as a hard mask the hard mask that has been patterned.
公开/授权文献:
信息查询:
EspacenetIPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/67 | .专门适用于在制造或处理过程中处理半导体或电固体器件的装置；专门适合于在半导体或电固体器件或部件的制造或处理过程中处理晶片的装置 |
| ----------H01L21/71 | ..限定在组H01L21/70中的器件的特殊部件的制造 |
| ------------H01L21/78 | ...把衬底连续地分成多个独立的器件 |
| --------------H01L21/782 | ....制造多个器件，每一个由单个电路元件组成 |
| ----------------H01L21/822 | .....衬底是采用硅工艺的半导体的 |
| ------------------H01L21/8222 | ......双极工艺 |
| --------------------H01L21/8234 | .......MIS工艺 |
| ----------------------H01L21/8239 | ........存储器结构 |
| ------------------------H01L21/8246 | .........只读存储器结构（ROM） |