基本信息:
- 专利标题: 加熱装置、基板処理システム及び加熱方法
- 专利标题(英):HEATING DEVICE, SUBSTRATE PROCESSING SYSTEM, AND HEATING METHOD
- 申请号:JP2020106988 申请日:2020-06-22
- 公开(公告)号:JP2022002271A 公开(公告)日:2022-01-06
- 发明人: 杉本 貴史 , ▲高▼橋 裕之 , 岡野 真也
- 申请人: 東京エレクトロン株式会社
- 申请人地址: 東京都港区赤坂五丁目3番1号
- 专利权人: 東京エレクトロン株式会社
- 当前专利权人: 東京エレクトロン株式会社
- 当前专利权人地址: 東京都港区赤坂五丁目3番1号
- 代理人: 金本 哲男; 萩原 康司; 扇田 尚紀; 齊藤 隆史; 三根 卓也
- 主分类号: H01L21/31
- IPC分类号: H01L21/31 ; H01L21/677
To make the temperature of a substrate at the time of reaching a processing device uniform in the substrate surface when the substrate is preheated outside the processing device and the heated substrate is held by the transport mechanism and transported to the processing device.SOLUTION: A heating device that heats a substrate before the substrate is transported to a processing device includes a support unit in which a transport mechanism for holding and transporting the substrate between the heating device and the processing device is provided externally, and that supports the substrate, and a heating unit having a light emitting element that emits light such that the substrate supported by the support unit can be heated independently of each other by light for each region divided in a plan view, and the light output of the light emitting element corresponding to a region in the substrate in contact with a substrate holding unit of the transport mechanism is higher than the light output of the light emitting element corresponding to the other region in the substrate.SELECTED DRAWING: Figure 6
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体,如掺杂材料 |
--------------H01L21/26 | ....用波或粒子辐射轰击的 |
----------------H01L21/31 | .....在半导体材料上形成绝缘层的,例如用于掩膜的或应用光刻技术的;以及这些层的后处理;这些层的材料的选择 |