基本信息:
- 专利标题： 半導体基板の洗浄乾燥方法
- 专利标题（英）：JP2018186231A - Washing and drying a semiconductor substrate
- 申请号：JP2017088548 申请日：2017-04-27
- 公开(公告)号：JP2018186231A 公开(公告)日：2018-11-22
- 发明人： 荻原 勤 , 渡邊 修 , 永田 岳志 , 小林 直貴 , 郡 大佑
- 申请人： 信越化学工業株式会社
- 申请人地址： 東京都千代田区大手町二丁目6番1号
- 专利权人： 信越化学工業株式会社
- 当前专利权人： 信越化学工業株式会社
- 当前专利权人地址： 東京都千代田区大手町二丁目6番1号
- 代理人： 好宮 幹夫; 小林 俊弘
- 主分类号： F26B5/00
- IPC分类号： F26B5/00 ; F26B9/00 ; C11D7/50 ; C11D7/26 ; H01L21/304
A suppressing collapse or disintegration such patterns which occurs during the washing liquid drying after cleaning a semiconductor substrate, to provide a washing and drying process efficiently cleaning liquid can be removed.
The A semiconductor substrate 1 on which a pattern is formed is washed with a washing liquid 3, remaining on the semiconductor substrate 1 by using a composition solution comprising a resin and a solvent containing a repeating unit represented by the following general formula (1) after replacing the washing solution 3 was, the solvent was removed by heating at a temperature below the decomposition temperature of the resin, while maintaining the semiconductor substrate 1 to the lower than the decomposition temperature of 0 ℃ or higher, spraying the decomposition temperature or more gases, a resin to the gas decomposing and removing from the contact surface 8 side.
.FIELD 1
信息查询:
EspacenetIPC结构图谱:
| F | 机械工程；照明；加热；武器；爆破 |
| --F26 | 干燥 |
| ----F26B | 从固体材料或制品中消除液体的干燥 |
| ------F26B5/00 | 不需要使用加热方法干燥固体材料或制品 |