基本信息:
- 专利标题： 高周波半導体モジュール
- 专利标题（英）：High-frequency semiconductor module
- 专利标题（中）：高频半导体模块
- 申请号：JP2016172849 申请日：2016-09-05
- 公开(公告)号：JP2016201576A 公开(公告)日：2016-12-01
- 发明人： 伊藤 敏洋 , 綱島 聡 , 村田 浩一
- 申请人： 日本電信電話株式会社
- 申请人地址： 東京都千代田区大手町一丁目5番1号
- 专利权人： 日本電信電話株式会社
- 当前专利权人： 日本電信電話株式会社
- 当前专利权人地址： 東京都千代田区大手町一丁目5番1号
- 代理人： 豊田 義元; 渡部 比呂志
- 主分类号： H01L23/13
- IPC分类号： H01L23/13 ; H01L23/36 ; H01L23/12
An object of the present invention is to provide a high frequency semiconductor module having the applicable high-frequency characteristics in a ceramic package.
A high-frequency semiconductor module 10 includes a multilayer ceramic substrate 11 having a cavity 40, a heat sink 20 provided at the bottom of the cavity 40, provided on the heat sink 20, the signal lead and the signal line 15a, and 15b an IC chip 31 connected via a capacitor 32 provided on the heat sink
20, provided on the multilayer ceramic substrate 11 upper surface, and the DC terminal 50 connected through a capacitor and a bonding wire 33, the laminated ceramic substrate 11 a DC leads 51 provided on the lower surface, it comprises a
direct current lead 51 and DC terminal 50 are electrically
connected through a via formed therein a multilayer ceramic substrate 11.
.TECHNICAL
公开/授权文献:
- JP6288879B2 高周波半導体モジュール 公开/授权日：2018-03-07