PROBLEM TO BE SOLVED: To allow a change in a deposition range of each film which composes a layered film by using the same mask when performing deposition of the layered film by gas supply.SOLUTION: A manufacturing method of a layered film comprises: preparing a substrate 6 on which a semiconductor element is formed and preparing a mask 5; and aligning the mask 5 and the substrate 6 in a deposition chamber. During deposition of the layered film 8, a clearance between the mask 5 and the substrate 6 is varied by supplying currents A1, A2 of current values having magnitudes different from each other from a current supply part to an electromagnet 4 in each of formation processes of first and second barrier layers 8a, 8b. That is, by differentiating the magnitudes of the currents A1, A2 supplied to the electromagnet 4, a magnetic attractive force of the electromagnet 4 varies and a pressure for deforming a deposition range variable part 7 by the mask 5 varies and contact pressure between the deposition range variable part 7 and the substrate 6 varies.