基本信息:
- 专利标题: Apparatus and method for detecting overlay error using the scatterometry
- 申请号:JP2009502820 申请日:2007-03-08
- 公开(公告)号:JP2009532862A 公开(公告)日:2009-09-10
- 发明人: カンデル・ダニエル , ゴロヴァネブスキイ・ボリス , ミーハー・ウォルター・ディ.
- 申请人: ケーエルエー−テンカー テクノロジィース コーポレイション
- 专利权人: ケーエルエー−テンカー テクノロジィース コーポレイション
- 当前专利权人: ケーエルエー−テンカー テクノロジィース コーポレイション
- 优先权: US78800506 2006-03-31; US52532006 2006-09-21
- 主分类号: H01L21/027
- IPC分类号: H01L21/027 ; H01L21/66
【選択図】図2(g)
Embodiment of The present invention includes a scatterometry targets are utilized in determining the alignment between the substrate layers. Target sequences, are formed on a substrate, and a plurality of target cells. Each cell has two layers including a periodic feature, The layers are configured such that the upper layer is arranged above the lower layer, periodic upper layer features are offset with respect to the periodic feature of the lower layer, and / or are configured so as to have a periodic features different from the pitch of the lower layer. These pitches are arranged so as to generate a periodic signal when the target is exposed to an illumination source. The target further comprises a disambiguation for features that are arranged in between cells, ambiguity removal features, resolve ambiguities caused by the periodic signal generated by the cell when exposed to the illumination source It is configured to.
.FIELD 2 (g)
公开/授权文献:
- JP5616627B2 ターゲットおよびサンプルの層の間のオーバレイ誤差を決定するための方法 公开/授权日:2014-10-29
信息查询:
EspacenetIPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |