PROBLEM TO BE SOLVED: To provide a method for preparing a non-volatile memory, a thin film transistor and a circuit including these components on various substrates. SOLUTION: The non-volatile memory cell is provided with: first and second semiconductor islands separated from each other by a prescribed distance on the same horizontal level so that the first semiconductor island configures a control gate 2 and the second semiconductor island configures a source terminal and a drain terminal; a gate dielectric layer formed at least on a part of the first semiconductor island; a tunnel ring dielectric layer 5 formed at least on a part of the second semiconductor island; a floating gate 7 formed at least on a part of the gate dielectric layer 4 and the tunnel ring dielectric layer 5, and a metal layer electrically contacting with the control gate 2 and the source and drain terminals. In one effective embodiment, the non-volatile memory cell can be manufactured by using "all-printed" processing technology. COPYRIGHT: (C)2008,JPO&INPIT