基本信息:
- 专利标题： INJECTION SEEDED F2 LITHOGRAPHY LASER
- 申请号：JP2000404079 申请日：2000-12-11
- 公开(公告)号：JP2001274488A 公开(公告)日：2001-10-05
- 发明人： ONKELS ECKEHARD D , DAS PALASH P , THOMAS P DAFFY , SANDSTROM RICHARD L , ERSHOV ALEXANDER I , PARTLO WILLIAM N
- 申请人： CYMER INC
- 专利权人： CYMER INC
- 当前专利权人： CYMER INC
- 优先权： US45916599 1999-12-10
- 主分类号： G03F7/20
- IPC分类号： G03F7/20 ; H01L21/027 ; H01S3/036 ; H01S3/038 ; H01S3/097 ; H01S3/134 ; H01S3/225 ; H01S3/23
摘要：
PROBLEM TO BE SOLVED: To provide a laser in more detail an injection seeded laser which is used for integrated-circuit lithography. SOLUTION: A tunable injection seeded very narrow band F2 lithography laser is provided. In the laser, the modular design feature of a long-life releasable lithography laser is combined with a special F2 line narrowing and tuning technique which is applied to a seed beam operated in a first gain medium, in such a way that a beam generates a very narrow laser beam which is used to stimulate narrow-band lasing in a second gain medium and which is useful for integrated-circuit lithography.
公开/授权文献:
- JP3895922B2 Injection seed method f2 lithography laser 公开/授权日：2007-03-22