基本信息:
- 专利标题：
- 申请号：FR9615347 申请日：1996-12-13
- 公开(公告)号：FR2742592B1 公开(公告)日：1999-02-05
- 发明人： IWAI NORIHIRO , KASUKAWA AKIHIKO
- 申请人： FURUKAWA ELECTRIC CO LTD
- 专利权人： FURUKAWA ELECTRIC CO LTD
- 当前专利权人： FURUKAWA ELECTRIC CO LTD
- 优先权： JP32696295 1995-12-15
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01S5/02 ; H01S5/06 ; H01S5/223 ; H01S5/32 ; H01S5/323 ; H01S3/18
摘要：
This invention gives birth to a semiconductor laser device which is equipped with a semiconductor substrate, a laser active layer with a first bandgap energy overlying the preceding semiconductor substrate, and a p-type cladding layer and an n-type cladding layer between which the preceding active layer is interposed. In addition, the referenced p-type cladding layer has a second bandgap energy exceeding 1.35 eV and remaining greater than the first bandgap energy. Direct bonding technique is adopted for fabricating the semiconductor laser device in question in place of epitaxial growth technique, because the cladding layer and active layer differ in lattice constant.
公开/授权文献:
- FR2742592A1 Long wavelength semiconductor laser device 公开/授权日：1997-06-20