基本信息:
- 专利标题： SEMICONDUCTOR DEVICE HAVING THROUGH-VIA STRUCTURE
- 申请号：EP23211598.0 申请日：2023-11-22
- 公开(公告)号：EP4379795A1 公开(公告)日：2024-06-05
- 发明人： KIM, Sunoo , DING, Shaofeng , AHN, Jeonghoon , OH, Jaehee
- 申请人： Samsung Electronics Co., Ltd.
- 申请人地址： KR Suwon-si, Gyeonggi-do 16677 129, Samsung-ro Yeongtong-gu
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do 16677 129, Samsung-ro Yeongtong-gu
- 代理机构： Marks & Clerk LLP
- 优先权： KR 20220163253 2022.11.29
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L23/528
摘要：
A semiconductor device includes: a semiconductor substrate; an integrated circuit layer disposed on the semiconductor substrate; a first metal wiring layer to an n-th metal wiring layer sequentially disposed on the semiconductor substrate and the integrated circuit layer, wherein n is a positive integer; a plurality of wiring vias connecting the first to n-th metal wiring layers to each other; and a through-via extending in a vertical direction from a via connection pad, which is any one of the first metal wiring layer to the n-th metal wiring layer, toward the semiconductor substrate and penetrating the semiconductor substrate, wherein the via connection pad is a capping-type via connection pad formed on an upper surface of the through-via.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/48 | .用于向或自处于工作中的固态物体通电的装置，例如引线、接线端装置 |