基本信息:
- 专利标题： COBALT FILLING OF INTERCONNECTS IN MICROELECTRONICS
- 专利标题（中）：微电子学中互连的钴填充
- 申请号：EP16744598.0 申请日：2016-06-30
- 公开(公告)号：EP3317437A1 公开(公告)日：2018-05-09
- 发明人： COMMANDER, John , PANECCASIO, JR., Vincent , ROUYA, Eric , WHITTEN, Kyle , SUN, Shaopeng
- 申请人： MacDermid Enthone Inc.
- 申请人地址： 245 Freight Street Waterbury, CT 06702 US
- 专利权人： MacDermid Enthone Inc.
- 当前专利权人： MacDermid Enthone Inc.
- 当前专利权人地址： 245 Freight Street Waterbury, CT 06702 US
- 代理机构： Jenkins, Peter David
- 优先权： US201562186978P 20150630
- 国际公布： WO2017004424 20170105
- 主分类号： C25D7/12
- IPC分类号： C25D7/12 ; C25D3/16 ; C25D5/18
摘要：
Processes and compositions for electroplating a cobalt deposit onto a semiconductor base structure comprising submicron-sized electrical interconnect features. In the process, a metalizing substrate within the interconnect features is contacted with an electrodeposition composition comprising a source of cobalt ions, an accelerator comprising an organic sulfur compound, an acetylenic suppressor, a buffering agent and water. Electrical current is supplied to the electrolytic composition to deposit cobalt onto the base structure and fill the submicron-sized features with cobalt. The process is effective for superfilling the interconnect features.
公开/授权文献:
- EP3317437B1 COBALT FILLING OF INTERCONNECTS IN MICROELECTRONICS 公开/授权日：2023-09-13
IPC结构图谱:
| C | 化学；冶金 |
| --C25 | 电解或电泳工艺；其所用设备 |
| ----C25D | 覆层的电解或电泳生产工艺方法；电铸；工件的电解法接合；所用的装置 |
| ------C25D7/00 | 以施镀制品为特征的电镀 |
| --------C25D7/12 | .半导体 |