
基本信息:
- 专利标题: SYSTEM AND METHOD FOR GAS PHASE DEPOSITION
- 专利标题(中):用于气相沉积的系统和方法
- 申请号:EP15202296.8 申请日:2015-12-23
- 公开(公告)号:EP3184666A1 公开(公告)日:2017-06-28
- 发明人: IVANOV, Alexey , RICHTER, Johannes
- 申请人: Singulus Technologies AG
- 申请人地址: Hanauer Landstrasse 103 63796 Kahl am Main DE
- 专利权人: Singulus Technologies AG
- 当前专利权人: Singulus Technologies AG
- 当前专利权人地址: Hanauer Landstrasse 103 63796 Kahl am Main DE
- 代理机构: Vossius & Partner Patentanwälte Rechtsanwälte mbB
- 主分类号: C23C16/46
- IPC分类号: C23C16/46 ; C23C16/48
摘要:
System and method for gas phase deposition of at least one material to a substrate having a first and a second surface opposite to the first surface. The system comprises a holding member configured to hold the substrate, a deposition member configured to apply the at least one material to the substrate from at least one direction and a heater located at a distance from the substrate and being configured to apply heat to the substrate from the side of the first surface and from the side of the second surface of the substrate.
摘要(中):
用于将至少一种材料气相沉积到具有与第一表面相对的第一和第二表面的基底的系统和方法。 该系统包括:保持构件,配置为保持基板;沉积构件,构造成将至少一种材料从至少一个方向施加到基板;以及加热器,位于距基板一定距离处,并配置为将热量施加到基板 从基底的第一表面的一侧和第二表面的一侧移除。
公开/授权文献:
- EP3184666B1 SYSTEM AND METHOD FOR GAS PHASE DEPOSITION 公开/授权日:2018-06-13