
基本信息:
- 专利标题: TWO-AXIS MAGNETIC FIELD SENSOR WITH SUBSTANTIALLY ORTHOGONAL PINNING DIRECTIONS
- 申请号:EP10770122.9 申请日:2010-04-16
- 公开(公告)号:EP2425428B1 公开(公告)日:2018-06-06
- 发明人: MATHER, Phillip , SLAUGHTER, Jon
- 申请人: Everspin Technologies, Inc.
- 申请人地址: 1347 N. Alma School Road, Suite 220 Chandler, AZ 85224 US
- 专利权人: Everspin Technologies, Inc.
- 当前专利权人: EVERSPIN TECHNOLOGIES, INC.
- 当前专利权人地址: EVERSPIN TECHNOLOGIES, INC.
- 代理机构: Eisenführ Speiser
- 优先权: US433679 20090430
- 国际公布: WO2010126722 20101104
- 主分类号: G11B5/33
- IPC分类号: G11B5/33
摘要:
A fabrication process and apparatus provide a high-performance magnetic field sensor (200) from two differential sensor configurations (201, 211) which require only two distinct pinning axes (206, 216) which are formed from a single reference layer (60) that is etched into high aspect ratio shapes (62, 63) with their long axes drawn with different orientations so that, upon treating the reference layer with a properly aligned orienting field (90) and then removing the orienting field, the high aspect ratio patterns provide a shape anisotropy that forces the magnetization of each patterned shape (62, 63) to relax along its respective desired axis. Upon heating and cooling, the ferromagnetic film is pinned in the different desired directions by one of 1) tailoring the intrinsic anisotropy of the reference layer during the depositing step, 2) forming a long axes of one of the patterned shapes (62, 63) at a non-orthogonal angle to the long axes of the other patterned shape (62, 63) when etched, or 3) applying a compensating field when pinning the reference layers.
公开/授权文献:
IPC结构图谱:
G | 物理 |
--G11 | 信息存储 |
----G11B | 基于记录载体和换能器之间的相对运动而实现的信息存储 |
------G11B5/00 | 借助于记录载体的激磁或退磁进行记录的;用磁性方法进行重现的;为此所用的记录载体 |
--------G11B5/012 | .磁盘信息的记录、重现或抹除 |
----------G11B5/33 | ..磁通敏感磁头的结构或制造 |