发明公开
EP2220680A1 SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION
审中-公开
基本信息:
- 专利标题： SEMICONDUCTOR DEVICE AND WAFER WITH A TEST STRUCTURE AND METHOD FOR ASSESSING ADHESION OF UNDER-BUMP METALLIZATION
- 专利标题（中）：半导体器件和晶圆随着对凸点下金属测试粘附性的测试结构和方法
- 申请号：EP08856728.4 申请日：2008-12-01
- 公开(公告)号：EP2220680A1 公开(公告)日：2010-08-25
- 发明人： ROUSSEVILLE, Lucie , BARDY, Serge , LE DUC, Philippe , DESMORTREUX, David
- 申请人： NXP B.V.
- 申请人地址： High Tech Campus 60 5656 AG Eindhoven NL
- 专利权人： NXP B.V.
- 当前专利权人： NXP B.V.
- 当前专利权人地址： High Tech Campus 60 5656 AG Eindhoven NL
- 代理机构： Krott, Michel
- 优先权： EP07291461 20071206
- 国际公布： WO2009072052 20090611
- 主分类号： H01L23/544
- IPC分类号： H01L23/544 ; G01R31/04
摘要：
Semiconductor device with a patterned pad metal layer and a patterned under- bump metallization layer being mutually electrically connected in a common contact area 22. The semiconductor device includes a first test structure 11 for determining a contact resistance between the patterned metallization layer and the patterned pad metal layer in the common contact areas 22. The first test structure includes a pad metal layer portion 24 and a metallization layer portion 18 being in electrical communication with the pad metal layer portion 24 through the common contact area 22. The first test structure 11 further includes connection areas 14, 16 that are electrically connected with each other substantially via the common contact area 22. Upon application of a current between the connection areas 14, 16 a voltage drop occurs that is representative for a voltage drop over the common contact area 22.
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L23/00 | 半导体或其他固态器件的零部件 |
| --------H01L23/544 | .加到半导体器件上的标志，例如注册商标、测试图案 |