发明公开
EP1833083A1 SILICON WAFER POLISHING METHOD AND SILICON WAFER PRODUCING METHOD, APPARATUS FOR POLISHING DISC-LIKE WORK AND SILICON WAFER
审中-公开
基本信息:
- 专利标题： SILICON WAFER POLISHING METHOD AND SILICON WAFER PRODUCING METHOD, APPARATUS FOR POLISHING DISC-LIKE WORK AND SILICON WAFER
- 专利标题（中）：硅晶片研磨方法及硅晶片的制造方法，设备抛光圆盘状的工作对硅晶片
- 申请号：EP05816858.4 申请日：2005-12-15
- 公开(公告)号：EP1833083A1 公开(公告)日：2007-09-12
- 发明人： MIZUSHIMA, Kazutoshi, Shirakawa Plant
- 申请人： SHIN-ETSU HANDOTAI COMPANY LIMITED
- 申请人地址： 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo 100-0005 JP
- 专利权人： SHIN-ETSU HANDOTAI COMPANY LIMITED
- 当前专利权人： SHIN-ETSU HANDOTAI COMPANY LIMITED
- 当前专利权人地址： 4-2, Marunouchi 1-Chome Chiyoda-ku Tokyo 100-0005 JP
- 代理机构： Wibbelmann, Jobst
- 优先权： JP2004379526 20041228
- 国际公布： WO2006070607 20060706
- 主分类号： H01L21/304
- IPC分类号： H01L21/304
摘要：
The present invention is a method for polishing a silicon wafer, in which an oxide film is formed on a back surface side of the wafer, wherein the oxide film on a chamfered portion of the silicon wafer is removed, and the oxide film on a peripheral portion of the back surface of the wafer is polished over at least 2 mm from the outermost peripheral portion of the back surface of the wafer so that a thickness of the polished oxide film decreases from inside to outside of the wafer, a method for producing such a silicon wafer, and a silicon wafer. Thereby, there are provided a method for polishing a silicon wafer in which particles' attaching to a wafer surface after handling can be prevented, decrease of resistivity due to autodoping is not brought about, and moreover, productivity does not decrease; a method for producing such a silicon wafer; an apparatus for polishing a disk-shaped workpiece suitable for performing the methods; and a silicon wafer in which particles do not attach to a surface after handling even if an oxide film is formed on a back surface of the wafer and decrease of resistivity due to autodoping is not brought about.
摘要（中）：
本发明是用于抛光硅晶片，在该氧化膜形成在晶片的背面侧的，worin的氧化膜的硅晶片的倒角部被除去上膜的周边的方法，以及所述氧化物 在晶片的背面表面的部分从晶片的背面的最外周部研磨过至少2mm，以便做了厚度抛光的氧化物薄膜减小从内部到晶片的外部，生产搜索的方法 硅晶片和硅晶片。 从而，提供了用于抛光在哪个粒子的附连到处理后的晶片表面的硅晶片的方法，可以防止，由于自动掺杂电阻率降低是没有带来，更以上，生产率也不会降低; 用于制造这样的硅晶片的方法; 用于抛光适合于执行方法的圆盘状工作件装置; 并且其中粒子的硅晶片不处理，即使在氧化膜形成是在晶片和由于自动掺杂电阻率降低的背面没有带来后附着到表面上。
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/304 | ......机械处理，例如研磨、抛光、切割 |