基本信息:
- 专利标题： METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC
- 专利标题（中）：抛光方法含硅介电
- 申请号：EP04707432.3 申请日：2004-02-02
- 公开(公告)号：EP1601735A1 公开(公告)日：2005-12-07
- 发明人： CARTER, Phillip, W.,c/o Cabot Microelectr. Corp. , JOHNS, Timothy, P.,c/o Cabot Microelectr. Corp,
- 申请人： Cabot Microelectronics Corporation
- 申请人地址： 870 N. Commons Drive Aurora, IL 60504 US
- 专利权人： Cabot Microelectronics Corporation
- 当前专利权人： CMC MATERIALS, INC., AURORA, US
- 当前专利权人地址： CMC MATERIALS, INC., AURORA, US
- 代理机构： Trueman, Lucy Petra
- 优先权： US356970 20030203
- 国际公布： WO2004069947 20040819
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; C09K3/14 ; H01L21/304 ; H01L21/306
摘要：
A chemical-mechanical polishing system comprising: (a) ceria abrasive having an average particle size of about 180 nm or less and a positive zeta potential, (b) a polishing additive bearing a functional group with a pKa of about 3 to about 9, wherein the polishing additive is selected from the group consisting of arylamines, aminoalcohols, aliphatic amines, heterocyclic amines, hydroxamic acids, aminocarboxylic acids, cyclic monocarboxylic acids, unsaturated monocarboxylic acids, substituted phenols, sulfonamides, thiols, salts thereof, and combinations thereof, and (c) a liquid carrier, wherein the chemical-mechanical polishing system has a pH of about 4 to about 6.
公开/授权文献:
- EP1601735B1 METHOD OF POLISHING A SILICON-CONTAINING DIELECTRIC 公开/授权日：2019-09-11
IPC结构图谱:
| C | 化学；冶金 |
| --C09 | 染料；涂料；抛光剂；天然树脂；黏合剂；其他类目不包含的组合物；其他类目不包含的材料的应用 |
| ----C09G | 虫胶清漆除外的抛光组合物；滑雪屐蜡 |
| ------C09G1/00 | 抛光组合物 |
| --------C09G1/02 | .含有磨料或研磨剂 |