![Semiconductor device](/ep/2002/03/20/EP1189270A2/abs.jpg.150x150.jpg)
基本信息:
- 专利标题: Semiconductor device
- 专利标题(中):半导体器件
- 申请号:EP01126199.7 申请日:1997-07-10
- 公开(公告)号:EP1189270A2 公开(公告)日:2002-03-20
- 发明人: Fukasawa, Norio, c/o Fujitsu Limited , Kawahara, Toshimi, c/o Fujitsu Limited , Morioka, Muneharu, c/o Fujitsu Limited , Osawa, Mitsunada , Shinma, Yasuhiro, c/o Fujitsu Automation Limited , Matsuki, Hirohisa, c/o Fujitsu Limited , Onodera, Masanori, c/o Fujitsu Limited , Kasai, Junichi, c/o Fujitsu Limited , Maruyama, Shigeyuki, c/o Fujitsu Limited , Sakuma, Masao, c/o Fujitsu Automation Limited , Suzuki, Yoshimi, c/o Fujitsu Automation Limited , Takenaka, Masashi, c/o Fujitsu Limited
- 申请人: FUJITSU LIMITED
- 申请人地址: 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 专利权人: FUJITSU LIMITED
- 当前专利权人: FUJITSU LIMITED
- 当前专利权人地址: 1-1, Kamikodanaka 4-chome, Nakahara-ku Kawasaki-shi, Kanagawa 211-8588 JP
- 代理机构: Silverman, Warren
- 优先权: JP18384496 19960712; JP27663496 19961018; JP1068397 19970123; JP18113297 19970707
- 主分类号: H01L21/56
- IPC分类号: H01L21/56 ; H01L21/60 ; H01L23/28 ; B29C43/18
摘要:
A semiconductor device having a chip-size package structure comprises a semiconductor element 11 on which protruding electrodes 12 are formed. Resin is applied to positions of the semiconductor elements provided with the bumps so that a resin layer 13 seals the protruding electrodes except for end portions thereof. Connections are made to, for example, wiring boards via the end portions of the protruding electrodes as such or via formations such as external protruding connectors provided to the end portions of the protruding electrodes.
摘要(中):
具有芯片尺寸封装结构的半导体器件包括其上形成有突出电极12的半导体元件11。 将树脂施加到设置有凸块的半导体元件的位置,使得树脂层13密封除了其端部之外的突出电极。 例如通过突起电极的端部或者通过设置在突起电极的端部的外部突起连接器等构造连接到例如布线板。
公开/授权文献:
- EP1189270A3 Semiconductor device 公开/授权日:2003-07-16
IPC结构图谱:
H | 电学 |
--H01 | 基本电气元件 |
----H01L | 半导体器件;其他类目未包含的电固体器件 |
------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
--------H01L21/02 | .半导体器件或其部件的制造或处理 |
----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
------------H01L21/50 | ...应用H01L21/06至H01L21/326中的任一小组都不包含的方法或设备组装半导体器件的 |
--------------H01L21/56 | ....封装,例如密封层、涂层 |