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1. 发明公开

EP1223622A3 Semiconductor device and method for fabrication thereof 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：EP1223622A3
公开(公告)日：2004-07-28
申请号：EP01308381.1
申请日：2001-10-01
申请人： FUJITSU LIMITED
发明人： Maruyama, Kenji, c/o Fujitsu Limited , Kurihara, Kazuaki, c/o Fujitsu Limited
IPC分类号： H01L27/115
CPC分类号： H01L28/56 , H01L28/60
摘要： A semiconductor device which comprises a first electrode 32, a ferroelectric film 36 formed above the first electrode, and a second electrode 40 formed above the ferroelectric film, further comprises intermediate layers 34, 38 formed at at least one of the boundary between the first electrode and the ferroelectric film, and the boundary between the ferroelectric film and the second electrode, such intermediate layer(s) having a perovskite crystal structure. Because such intermediate layers having perovskite crystal structure are formed between the first and/or second electrodes and the ferroelectric film, even when a base metal is used as a material for the bottom and/or top electrode of a ferroelectric capacitor, the ferroelectric film can have crystal structure exhibiting ferroelectricity. Base metals can be used as materials for the bottom and top electrodes of the ferroelectric capacitor to decrease the cost of semiconductor devices. Materials which it has been difficult to use for the bottom and top electrodes of a ferroelectric capacitor can now be used to simplify the fabrication processes and improve electric characteristics.
摘要翻译：包括第一电极32，形成在第一电极上方的铁电体膜36和形成在铁电体膜上方的第二电极40的半导体器件还包括形成在第一电极和第二电极之间的至少一个边界处的中间层34,38，和铁电薄膜以及铁电薄膜和第二电极之间的边界，这种中间层具有钙钛矿晶体结构。由于在第一和/或第二电极与强电介质膜之间形成具有钙钛矿型晶体结构的中间层，所以即使在使用贱金属作为强电介质电容器的下部和/或上部电极的材料的情况下，强电介质膜具有呈现铁电性的晶体结构。贱金属可以用作铁电电容器的底部电极和顶部电极的材料，以降低半导体器件的成本。现在可以使用难以用于铁电电容器的底部电极和顶部电极的材料来简化制造工艺并改善电特性。

3. 发明公开

EP1404387A1 FRACTURE-RESISTANT, CROSS-LINKED ULTRA HIGH MOLECULAR WEIGHT POLYETHYLENE SHAPED MATERIAL AND ARTICLES MADE THEREFROM 审中-公开
标题翻译：破乳固体化，网络化，聚形materal具有超高分子量和对象由其MADE
公开(公告)号：EP1404387A1
公开(公告)日：2004-04-07
申请号：EP00965571.3
申请日：2000-07-26
申请人： NEW YORK SOCIETY FOR THE RELIEF OFTHE RUPTURED AND CRIPPLEDMAINTAINING THE HOSPITAL FOR SPECIAL SURGERY
发明人： LI, Stephen
IPC分类号： A61L27/16 , A61L31/04 , A61F2/30
CPC分类号： A61L27/16 , A61F2/3094 , A61F2002/30685 , A61F2002/30957 , A61L31/048 , C08L23/06
摘要： The present invention relates to a tough, wear resistant Ultra High Molecular Weight Polyethylene (UHMWPE) prepared by the crosslinking of a UHMWPE shaped article with irradiation doses higher than 4 Mrads, preferably higher than 5 Mrads, and most preferably less than 10 Mrads. The invention particularly provides total joint replacement devices and methods of making them for the hip, knee, elbow and shoulder.

4. 发明公开

EP1143510A3 Semiconductor device having increased reliability and method of producing the same and semiconductor chip suitable for such a semiconductor device and method of producing the same 审中-公开
标题翻译：具有增加的可靠性，其制造方法和适用于这种其半导体装置及其制造方法的半导体芯片的半导体器件
公开(公告)号：EP1143510A3
公开(公告)日：2004-01-21
申请号：EP00310281.1
申请日：2000-11-20
申请人： FUJITSU LIMITED
发明人： Fukasawa, Norio, c/o Fujitsu Limited , Kawahara, Toshimi , Hozumi, Takashi
IPC分类号： H01L23/31 , H01L21/56
CPC分类号： H01L23/3114 , H01L21/56 , H01L29/0657 , H01L2224/05567 , H01L2224/05571 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01078 , H01L2924/10157 , H01L2924/15311 , H01L2224/05599
摘要： A semiconductor device (30A) is provided, which device includes a semiconductor chip (32A) including external terminals (33) formed on a surface thereof and a sealing resin (35A) formed on the surface of the semiconductor chip (32A). A contaminant film (48) formed on the surface of said semiconductor chip (32A) has a laser-processed edge so that a peripheral portion of the surface of said semiconductor chip (32A) is bonded to the sealing resin (35A).

5. 发明授权

EP0929466B1 CLOSURE CAP HAVING BLISTER PACK RUPTURABLE UPON OPENING OF CAP 失效
标题翻译：与吸封闭盖，其撕开BY开启盖子
公开(公告)号：EP0929466B1
公开(公告)日：2003-12-03
申请号：EP97925790.4
申请日：1997-06-24
申请人： Blast Packaging Pty Ltd
发明人： Blast Packaging Pty Ltd
IPC分类号： B65D51/28 , B65D81/32 , B65D25/08
CPC分类号： B65D51/2828

6. 发明授权

EP0645820B1 A semiconductor device and a method of manufacturing the same 失效
标题翻译：一种半导体器件及其制造方法
公开(公告)号：EP0645820B1
公开(公告)日：2003-11-19
申请号：EP94306878.3
申请日：1994-09-20
申请人： FUJITSU LIMITED
发明人： Hashimoto, Koichi, c/o Fujitsu Limited
IPC分类号： H01L27/11 , H01L27/105
CPC分类号： H01L27/11 , H01L27/1104 , Y10S257/903

7. 发明公开

EP1248150A3 Radiation sensitive material and method for forming pattern 失效
标题翻译： Strahlungsempfindliches材料和Verfahren zur Herstellung eines Musters
公开(公告)号：EP1248150A3
公开(公告)日：2003-11-05
申请号：EP02008746.6
申请日：1994-12-28
申请人： FUJITSU LIMITED
发明人： Takechi, Satoshi , Takahashi, Makoto , Kaimoto, Yuko
IPC分类号： G03F7/039 , G03F7/004 , C08L33/06 , C08L33/20 , C08L25/18 , H05K3/06
CPC分类号： G03F7/039 , C08K5/375 , G03F7/0045 , G03F7/0392 , C08L33/06
摘要： Groups of radiation sensitive materials including various (meth) acrylic acid / (meth) acrylic ester monomer-based copolymers either used with compounds generating acids on application of radiation or containing hydrophilic groups and used with hydrophobic compounds and which monomers may alternatively be itaconic acid derivatives with certain specified substituting groups, are used in production of photoresists which are selectively exposed between prebaking and postbaking steps, after which the resists are developed to form the desired pattern. Preferably, the baked resists contain adamantyl substituents.
摘要翻译：一组辐射敏感材料，包括各种（甲基）丙烯酸/（甲基）丙烯酸酯单体基共聚物，与使用辐射或含有亲水基团并与疏水性化合物一起使用的化合物产生酸的化合物一起使用，哪些单体可以是衣康酸衍生物使用某些指定的取代基团，用于制备在预烘烤和后烘烤步骤之间选择性暴露的光致抗蚀剂，之后将抗蚀剂显影以形成所需图案。优选地，烘烤抗蚀剂含有金刚烷基取代基。

8. 发明公开

EP1128531A3 Coil inserter for stator winding 审中-公开
标题翻译： Maschine zum Einziehen von Spulen einer Statorwickelung
公开(公告)号：EP1128531A3
公开(公告)日：2003-10-15
申请号：EP01301644.9
申请日：2001-02-23
申请人： FANUC LTD
发明人： Katsuzawa, Yukio , Masuya, Michi, Room 14-301, FANUC Manshonharimomi , Tagami, Kiyoshi , Oka, Hideki
IPC分类号： H02K15/06
CPC分类号： H02K15/068 , Y10T29/49009 , Y10T29/49073 , Y10T29/53143
摘要： Wedge guides 12 for holding a wedge 11 are mounted onto a base 10, and a stripper 15 is fixed to the other end of the wedge guide 12. A blade holder 13 including a plurality of blades 16 vertically installed is held in such a manner as to be freely advanceable and retractable in an up-and-down direction. A coil 30 wound is inserted between the blades 16, and alignment tool 7 is inserted at the tip ends of the blades. A stator iron core 40 is inserted into the alignment tool 7, and the stator iron core 40 is moved until the tip ends of the blades 16 penetrate the stator iron core 40. Thereafter, the stator iron core 40 and a connecting rod 19, the other end of which being connected to the blade holder 13, are pushed by a stator pusher 50, whereby the blade holder 13 is also caused to move together with the stator iron core 40 to insert the coil 30 into grooves in the stator iron core 40.
摘要翻译：用于保持楔11的楔形导向件12安装在基座10上，并且剥离器15固定到楔形导向件12的另一端。包括垂直安装的多个叶片16的刀片保持器13以如下方式保持：能够在上下方向上自由地前进和后退。缠绕的线圈30插入在叶片16之间，并且对准工具7插入叶片的末端。定子铁芯40插入到对准工具7中，定子铁芯40移动直到叶片16的前端穿过定子铁芯40.此后，定子铁芯40和连接杆19 其另一端连接到刀架13，被定子推动器50推动，由此刀片保持器13也与定子铁芯40一起移动，以将线圈30插入定子铁芯40中的凹槽中。

9. 发明公开

EP1332831A1 ALLOY FOR SOLDER AND SOLDER JOINT 有权
标题翻译：合金用于焊接和钎焊连接
公开(公告)号：EP1332831A1
公开(公告)日：2003-08-06
申请号：EP01972512.6
申请日：2001-09-26
申请人： FUJITSU LIMITED
发明人： KITAJIMA, Masayuki, C/O FUJITSU LIMITED , SHONO, Tadaaki, C/O FUJITSU LIMITED , HONMA, Hitoshi, C/O FUJITSU LIMITED , TAKESUE, Masakazu, C/O FUJITSU LIMITED , NODA, Yutaka, C/O FUJITSU LIMITED
IPC分类号： B23K35/26
CPC分类号： C22C13/00 , B23K35/262 , C22C13/02
摘要： A Pb-free solder alloy and a soldered bond using the same, in which the solder alloy has no harmful environmental effect but has a solderability comparable to that of the conventional Pb-Sn solder alloy. The solder alloy of the present invention either consists of Zn: 3.0 - 14.0 wt%, Al: 0.0020 - 0.0080 wt%, and the balance of Sn and unavoidable impurities or consists of Zn: 3.0 - 14.0 wt%, Bi: 3.0 - 6.0 wt%, Al: 0.0020 - 0.0100 wt%, and the balance of Sn and unavoidable impurities. The soldered bond of the present invention consists of either of the present inventive solder alloys.

10. 发明公开

EP1271482A3 Thermally stable low noise magnetic recording media 有权
标题翻译：热稳定性，低噪音磁记录介质
公开(公告)号：EP1271482A3
公开(公告)日：2003-07-09
申请号：EP02254594.1
申请日：2002-06-28
申请人： FUJITSU LIMITED
发明人： Okuyama, Chiaki, c/o Fujitsu Limited , Endo, Atsushi, c/o Yamagata Fujitsu Limited , Kikuchi, Akira, c/o Yamagata Fujitsu Limited , Gouke, Takashi, c/o Yamagata Fujitsu Limited , Murao, Reiko, c/o Yamagata Fujitsu Limited
IPC分类号： G11B5/64
CPC分类号： G11B5/7325 , G11B5/656 , Y10T428/265
摘要： A magnetic recording medium which is thermally stable and produces low media noise. By providing a plurality of intermediate layers made of a CoCr alloy of which saturation magnetic flux densities are controlled within a predetermined range, the magnetic recording medium simultaneously realizes both a high S/Nm and thermal stability.

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