基本信息:
- 专利标题： Method of forming carbon nanotubes
- 专利标题（中）：一种用于生产碳纳米管的过程
- 申请号：EP00303469.1 申请日：2000-04-25
- 公开(公告)号：EP1046613A3 公开(公告)日：2002-01-23
- 发明人： Jang, Jin , Chung, Suk-Jae Dept. of Physics
- 申请人： Iljin Nanotech Co., Ltd. , Jin Jang
- 申请人地址： 50-1 Dohwa-dong, Mapo-gu Seoul KR
- 专利权人： Iljin Nanotech Co., Ltd.,Jin Jang
- 当前专利权人： Iljin Nanotech Co., Ltd.,Jin Jang
- 当前专利权人地址： 50-1 Dohwa-dong, Mapo-gu Seoul KR
- 代理机构： Belcher, Simon James
- 优先权： KR9914306 19990421; KR0019559 20000414
- 主分类号： C01B31/00
- IPC分类号： C01B31/00 ; C01B31/02
摘要：
An easy method of forming purified carbon nanotubes from which graphitic phase or carbon particles are removed, using a high-density plasma. Carbon nanotubes are grown on a substrate using a plasma chemical vapor deposition method at a high plasma density of 10 11 cm -3 or more. The carbon nanotube formation includes: growing a carbon nanotube layer on a substrate to have a predetermined thickness by plasma deposition; purifying the carbon nanotube layer by plasma etching; and repeating the growth and the purification of the carbon nanotube layer. For the plasma etching, a halogen-containing gas, for example, a carbon tetrafluoride gas, is #used as a source gas.
公开/授权文献:
- EP1046613B1 Method of forming carbon nanotubes 公开/授权日：2005-02-09