
基本信息:
- 专利标题: COMBINATORIAL MOLECULAR LAYER EPITAXY DEVICE
- 专利标题(中):组合器件外延分子层
- 申请号:EP99943276.8 申请日:1999-09-10
- 公开(公告)号:EP1038996B1 公开(公告)日:2007-09-05
- 发明人: KAWASAKI, Masashi Tokyo Inst. Tech , KOINUMA, Hideomi Tokyo Inst. Tech
- 申请人: Japan Science and Technology Agency , Kawasaki, Masashi
- 申请人地址: 4-1-8, Honcho Kawaguchi-shi Saitama JP
- 专利权人: Japan Science and Technology Agency,Kawasaki, Masashi
- 当前专利权人: Japan Science and Technology Agency,Kawasaki, Masashi
- 当前专利权人地址: 4-1-8, Honcho Kawaguchi-shi Saitama JP
- 代理机构: Sparing Röhl Henseler Patentanwälte European Patent Attorneys
- 优先权: JP25896798 19980911; JP25896898 19980911; JP25896998 19980911; JP25897098 19980911
- 国际公布: WO2000015884 20000323
- 主分类号: C30B23/08
- IPC分类号: C30B23/08 ; H01L21/203 ; C30B23/02
摘要:
A combinatorial molecular layer epitaxy device comprising a pressure-controllable common chamber (22), at least one transferable substrate heating unit (36) having in the common chamber a substrate holder (48) holding at least one substrate and at least one pressure-controllable processing chamber (24, 26, 28) each corresponding to a substrate heating unit, wherein a growth chamber (24) out of processing chambers has a multiple-material supply means for supplying materials to substrates (5) held by each substrate heating unit, a gas supply means for supplying gas onto the surfaces of substrates, and an on-site observation means for observing on-site an epitaxial growth for each monolayer on a substrate surface, whereby forming each temperature-and pressure-controllable vacuum chamber by each substrate heating unit and each processing chamber.
公开/授权文献:
- EP1038996A1 COMBINATORIAL MOLECULAR LAYER EPITAXY DEVICE 公开/授权日:2000-09-27