EP0904603B1 SiC-based IGBT and MISFET with vertical channel and corresponding manufacturing method
失效
基本信息:
- 专利标题： SiC-based IGBT and MISFET with vertical channel and corresponding manufacturing method
- 专利标题（中）：IGBT和SiC基MISFET垂直沟道和相应的生产方法
- 申请号：EP97915797.1 申请日：1997-03-18
- 公开(公告)号：EP0904603B1 公开(公告)日：2008-09-10
- 发明人： HARRIS, Christopher , KONSTANTINOV, Andrei , JANZEN, Erik
- 申请人： CREE, INC.
- 申请人地址： 4600 Silicon Drive Durham, NC 27703 US
- 专利权人： CREE, INC.
- 当前专利权人： CREE, INC.
- 当前专利权人地址： 4600 Silicon Drive Durham, NC 27703 US
- 代理机构： Olsson, Jan
- 优先权： SE9601177 19960327
- 国际公布： WO1997036315 19971002
- 主分类号： H01L29/24
- IPC分类号： H01L29/24 ; H01L29/72 ; H01L29/78 ; H01L21/20
摘要：
An IGBT of SiC comprises superimposed a drain (1), a highly doped p-type substrate layer (2), a highly doped n-type buffer layer (3), a low doped n-type drift layer (4), a highly doped p-type base layer (5), a highly doped n-type source region layer (6) and source (7). The transistor also comprises a vertical trench (8) extending through the source region layer and the base layer and to the drift layer. It also comprises an additional low doped p-type layer (13) arranged laterally to the base layer, connecting it to an insulating layer (11) and extending vertically at least over the extension of the base layer. A gate electrode (12) is applied on the insulating layer for, upon applying a voltage to the gate electrode, forming a conducting inversion channel at the interface between said additional layer (13) and the insulating layer for electron transport from the source to the drain.