基本信息:
- 专利标题： Semi-selective chemical vapor deposition of conducting material
- 专利标题（中）：导电材料的半选择性化学气相沉积
- 申请号：EP97307355.4 申请日：1997-09-22
- 公开(公告)号：EP0831523A3 公开(公告)日：1999-08-04
- 发明人： Mosely, Roderick Craig , Chen, Lian-Yuh , Guo, Ted
- 申请人： APPLIED MATERIALS, INC.
- 申请人地址： 3050 Bowers Avenue, M/S 2061 Santa Clara, California 95054-3299 US
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： 3050 Bowers Avenue, M/S 2061 Santa Clara, California 95054-3299 US
- 代理机构： Bayliss, Geoffrey Cyril
- 优先权： US718656 19960923
- 主分类号： H01L21/3205
- IPC分类号： H01L21/3205 ; H01L21/768
摘要：
The disclosure relates to an apparatus and method for semi-selectively depositing a material on a substrate by chemical vapor deposition to form continuous, void-free contact holes or vias in sub-half micron applications. An insulating (22) layer is preferentially deposited on the field of a substrate to delay or inhibit nucleation of metal on the field. A CVD metal (34) is then deposited onto the substrate and grows selectively in the contact hole or via (20) where a barrier layer (22) serves as a nucleation layer. The process is preferably carried out in a multi-chamber system (35) that includes both PVD (36) and CVD (40) processing chambers so that once the substrate is introduced into a vacuum environment, the filing of contact holes and vias occurs without the formation of an oxide layer on a patterned substrate.
公开/授权文献:
IPC结构图谱:
| H | 电学 |
| --H01 | 基本电气元件 |
| ----H01L | 半导体器件；其他类目未包含的电固体器件 |
| ------H01L21/00 | 专门适用于制造或处理半导体或固体器件或其部件的方法或设备 |
| --------H01L21/02 | .半导体器件或其部件的制造或处理 |
| ----------H01L21/027 | ..未在H01L21/18或H01L21/34组中包含的为进一步的光刻工艺在半导体之上制作掩膜 |
| ------------H01L21/18 | ...器件有由周期表第Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料 |
| --------------H01L21/26 | ....用波或粒子辐射轰击的 |
| ----------------H01L21/302 | .....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割 |
| ------------------H01L21/3205 | ......非绝缘层的沉积，例如绝缘层上的导电层、电阻层（器件内部的通电装置入H01L23/52）；这些层的后处理 |