基本信息:
- 专利标题： Stable suspensions of boron, phosphorus, antimony and arsenic dopants
- 专利标题（中）：硼，磷，锑或掺杂剂含有砷的稳定悬浮液。
- 申请号：EP84105124.6 申请日：1984-05-07
- 公开(公告)号：EP0130311A2 公开(公告)日：1985-01-09
- 发明人： Gupta, Arunava (NMI) , West, Gary Allen , Donlan, Jeffrey Peter
- 申请人： AlliedSignal Inc.
- 申请人地址： 101 Columbia Road P.O. Box 2245 Morristown, New Jersey 07962-2245 US
- 专利权人： AlliedSignal Inc.
- 当前专利权人： AlliedSignal Inc.
- 当前专利权人地址： 101 Columbia Road P.O. Box 2245 Morristown, New Jersey 07962-2245 US
- 代理机构： Brock, Peter William
- 优先权： US502360 19830608
- 主分类号： C01B21/064
- IPC分类号： C01B21/064 ; C01B33/06 ; C01B35/02 ; H01L21/225 ; B01J13/00
摘要：
Semiconductor doping compositions comprising a suspension of (a) a dopant material, in the form of finely divided spherical particles, such as P x Siy or B,Siy wherein x and y vary from 0.001 to 99.999 mole percent, (b) an effective amount of a thermally degradable polymeric organic binder such as polymethyl methacrylate; and (c) an amount of an organic solvent, such a cyclohexanone, sufficient to dissolve said polymeric organic binder, such as polymethylmethacrylate, and to disperse said dopant material are disclosed. Three onestep diffusion processes using the semiconductor doping compositions of the present invention for preparation of semiconductor materials having a wide range of sheet resistances and junction depths are also disclosed. The dopant materials selected for the semiconductor compositions of the present invention are less sensitive to moisture and chemical degradation and thereby afford greater processing latitude, are more reproducible and are less prone to create damage to and/or staining of the semiconductor substrate.
IPC结构图谱:
| C | 化学；冶金 |
| --C01 | 无机化学 |
| ----C01B | 非金属元素；其化合物 |
| ------C01B21/00 | 氮；其化合物 |
| --------C01B21/06 | .氮与金属、硅或硼的二元化合物 |
| ----------C01B21/064 | ..与硼 |