
基本信息:
- 专利标题: 高功率密度GaN全桥LLC电源模块
- 专利标题(英):High-power density GaN full-bridge LLC power supply module
- 申请号:CN201910739189.9 申请日:2019-08-12
- 公开(公告)号:CN110365217A 公开(公告)日:2019-10-22
- 发明人: 许媛 , 陈珍海 , 张燕飞 , 赵琳娜 , 鲍婕 , 宁仁霞 , 占林松 , 黄伟
- 申请人: 黄山学院
- 申请人地址: 安徽省黄山市屯溪区西海路39号
- 专利权人: 黄山学院
- 当前专利权人: 黄山学院
- 当前专利权人地址: 安徽省黄山市屯溪区西海路39号
- 代理机构: 苏州国诚专利代理有限公司
- 代理人: 韩凤
- 主分类号: H02M3/335
- IPC分类号: H02M3/335 ; H02M7/219 ; H02M1/42 ; B60L53/22
The invention discloses a high-power density GaN full-bridge LLC power supply module, which comprises an input rectifier module, a GaN power factor correction module and a GaN full-bridge LLC converter module connected in sequence, wherein the GaN power factor correction module performs power factor correction on input of an input high-voltage DC bus DC obtained by the input rectifier module, anda high-voltage bus Vbus and a low-voltage bus Vgnd after power factor correction are obtained; and the GaN full-bridge LLC converter module performs DC/DC conversion on output of the high-voltage busVbus and the low-voltage bus Vgnd, and an output high-voltage bus Vout+ and an output low-voltage bus Vout- are adopted for output. In order to improve the switching frequency of the full-bridge LLC power supply module, an LGA-packaged GaN device is adopted for switching conversion; and in order to improve the reliability, a double-sided layout structure is adopted for layout optimization on a gate drive, the multi-tube parallel GaN device and the voltage bus, the GaN device is ensured to work in a safe area state, high-density power integration and high efficiency are further realized, and the related technology can be widely applied to a high-density AC/DC power supply module.
公开/授权文献:
- CN110365217B 高功率密度GaN全桥LLC电源模块 公开/授权日:2021-03-12
IPC结构图谱:
H | 电学 |
--H02 | 发电、变电或配电 |
----H02M | 用于交流和交流之间、交流和直流之间、或直流和直流之间的转换以及用于与电源或类似的供电系统一起使用的设备;直流或交流输入功率至浪涌输出功率的转换;以及它们的控制或调节 |
------H02M3/00 | 直流功率输入变换为直流功率输出 |
--------H02M3/02 | .没有中间变换为交流的 |
----------H02M3/24 | ..用静态变换器的 |
------------H02M3/28 | ...应用有控制极的放电管或有控制极的半导体器件产生中间交流电的 |
--------------H02M3/305 | ....应用需要熄灭装置的闸流管或晶闸管型器件的 |
----------------H02M3/335 | .....仅用半导体器件的 |