The invention discloses a driving circuit capable of adaptively adjusting the switching speed of SiC MOSFET, the circuit comprises a main driving circuit, a grid voltage slope detection circuit and adriving current adjusting circuit, and the main driving circuit is composed of a voltage totem-pole structure circuit and a driving resistor; the grid voltage slope detection circuit part is composedof a differential unit and four comparator units. The driving current adjusting circuit part is composed of a digital control chip and two controllable current sources. According to the driving circuit, on the basis of a traditional driving circuit, the switching speed of the SiC MOSFET is dynamically adjusted through a grid voltage slope detection result. Through the design of the differential unit and the comparator unit, the switching speed of the SiC MOSFET is controlled within a reasonable range. According to the driving circuit, the working reliability and efficiency of the device are improved on the basis of giving full play to the advantage of the high-speed switching performance of the SiC MOSFET.