![一种自适应调节SiC MOSFET开关速度的驱动电路](/CN/2018/1/324/images/201811622066.jpg)
基本信息:
- 专利标题: 一种自适应调节SiC MOSFET开关速度的驱动电路
- 专利标题(英):Driving circuit capable of adaptively adjusting switching speed of SiC MOSFET
- 申请号:CN201811622066.9 申请日:2018-12-28
- 公开(公告)号:CN109981088A 公开(公告)日:2019-07-05
- 发明人: 修强 , 秦海鸿 , 王守一 , 张英 , 付大丰
- 申请人: 南京航空航天大学
- 申请人地址: 江苏省南京市江宁区将军大道29号
- 专利权人: 南京航空航天大学
- 当前专利权人: 南京航空航天大学
- 当前专利权人地址: 江苏省南京市江宁区将军大道29号
- 代理机构: 江苏圣典律师事务所
- 代理人: 贺翔
- 主分类号: H03K17/041
- IPC分类号: H03K17/041 ; H03K17/12
The invention discloses a driving circuit capable of adaptively adjusting the switching speed of SiC MOSFET, the circuit comprises a main driving circuit, a grid voltage slope detection circuit and adriving current adjusting circuit, and the main driving circuit is composed of a voltage totem-pole structure circuit and a driving resistor; the grid voltage slope detection circuit part is composedof a differential unit and four comparator units. The driving current adjusting circuit part is composed of a digital control chip and two controllable current sources. According to the driving circuit, on the basis of a traditional driving circuit, the switching speed of the SiC MOSFET is dynamically adjusted through a grid voltage slope detection result. Through the design of the differential unit and the comparator unit, the switching speed of the SiC MOSFET is controlled within a reasonable range. According to the driving circuit, the working reliability and efficiency of the device are improved on the basis of giving full play to the advantage of the high-speed switching performance of the SiC MOSFET.
公开/授权文献:
- CN109981088B 一种自适应调节SiC MOSFET开关速度的驱动电路 公开/授权日:2024-04-12
IPC结构图谱:
H | 电学 |
--H03 | 基本电子电路 |
----H03K | 脉冲技术 |
------H03K17/00 | 电子开关或选通,即不通过通断接触的 |
--------H03K17/04 | .提高开关速度的改进 |
----------H03K17/041 | ..没有从输出电路到控制电路的反馈 |